K4RHE165VB-BCWM vs K4RBH165VB-BCQK 对比

详细并排对比 K4RHE165VB-BCWM 出自 Samsung Electronics 和 K4RBH165VB-BCQK 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4RHE165VB-BCWM K4RHE165VB-BCWM - 24Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung

K4RHE165VB-BCWM - 24Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung

K4RHE165VB-BCWM ✓ 量产中
Samsung Electronics
K4RBH165VB-BCQK K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

K4RBH165VB-BCQK ✓ 量产中

规格对比

参数 K4RHE165VB-BCWM K4RBH165VB-BCQK
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $0.00
存储器类型 DDR5 SDRAM DDR5 SDRAM
Density 24 Gb (3 GB) —
存储组织 1G x 16 1G x 16
数据速率 5600 Mbps 4800 Mbps/pin
电源电压 1.1 V [DATA_NEEDED: core supply voltage (VDD), nominally 1.1 V for DDR5]
封装 106 FBGA —
安装类型 Surface Mount (BGA) Surface Mount
工作温度 0 to 85 C 0 C to +85 C
Product Status Mass Production —
接口 DDR5 (parallel, DDR) —
Access Type Synchronous —
Clock Rate (nominal) 2800 MHz (5600 MT/s DDR) —
Ball Count 106 —
RoHS 状态 [DATA_NEEDED: RoHS Status] [DATA_NEEDED: RoHS status]
MSL 等级 [DATA_NEEDED: MSL Level] —
Standard Pack Quantity [DATA_NEEDED: Standard Pack Quantity] —
存储容量 — 16 Gb
Speed Grade — BCQK (4800 Mbps)
Self Refresh — Auto self-refresh
Reset Function — Asynchronous reset
Error Correction — On-chip (on-die) ECC
Write Leveling — Yes
CRC Function — Yes
ZQ Calibration — Yes
Package Type — [DATA_NEEDED: exact package code, expected FBGA surface mount]
Burst Length — [DATA_NEEDED: burst length (BL16 per DDR5 standard)]

数据手册与资源

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