K6X0808C1D-GF55000 vs K6X0808C1D-GF55T 对比
详细并排对比 K6X0808C1D-GF55000 出自 Samsung Electronics 和 K6X0808C1D-GF55T 出自 Samsung Electro-Mechanics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K6X0808C1D-GF55000 - 32Kx8 Async SRAM 55ns | Samsung Semiconductor
K6X0808C1D-GF55000 ✓ 量产中Samsung Electro-Mechanics
K6X0808C1D-GF55T - 32Kx8 55ns Async SRAM 5V | Samsung
K6X0808C1D-GF55T ✓ 量产中规格对比
| 参数 | K6X0808C1D-GF55000 | K6X0808C1D-GF55T |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electro-Mechanics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.20 | $1.85 |
| 存储器类型 | SRAM - Asynchronous | SRAM - Asynchronous |
| 存储容量 | 256 Kbit | 256 Kbit |
| 存储组织 | 32K x 8 | 32K x 8 |
| Access Time | 55 ns | 55 ns |
| 接口 | Parallel | Parallel |
| 电源电压 | 5 V | 5.0 V |
| 安装类型 | Surface Mount | Surface Mount |
| 封装 | 28-SOP | 28-SOP (450 mil) |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Operating Current | [DATA_NEEDED: operating current] | — |
| Write Cycle Time | [DATA_NEEDED: write cycle time] | — |
| 输出类型 | Three-state, common data I/O | — |
| Control Signals | CE, OE, WE (active low) | CE, OE, WE |
| Memory Format | Volatile, no refresh required | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Technology | Low-power CMOS | — |
| Process Technology | — | Full CMOS |
| Active Current | — | [DATA_NEEDED: active current] |
| Data Retention Voltage | — | Low data retention voltage supported (per datasheet) |
| Address Bus Width | — | 15 bit |
| 数据总线宽度 | — | 8 bit |
| Packaging | — | Tape & Reel (T suffix) |