K9DUGY8S0M-BCK0 vs K9FGGY8J5A-BCK0 对比

详细并排对比 K9DUGY8S0M-BCK0 出自 Samsung Electronics 和 K9FGGY8J5A-BCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9DUGY8S0M-BCK0 K9DUGY8S0M-BCK0 - Samsung NAND Flash Memory IC | Samsung

K9DUGY8S0M-BCK0 - Samsung NAND Flash Memory IC | Samsung

K9DUGY8S0M-BCK0 ✓ 量产中
Samsung Electronics
K9FGGY8J5A-BCK0 K9FGGY8J5A-BCK0 - Samsung V-NAND Flash Memory | Samsung Electronics

K9FGGY8J5A-BCK0 - Samsung V-NAND Flash Memory | Samsung Electronics

K9FGGY8J5A-BCK0 ✓ 量产中

规格对比

参数 K9DUGY8S0M-BCK0 K9FGGY8J5A-BCK0
品牌 Samsung Electronics Samsung Electronics
分类 Flash Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $0.00
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9 series NAND flash K9 Series NAND Flash
存储器类型 NAND Flash NAND Flash (non-volatile)
Density [DATA_NEEDED: memory density] [DATA_NEEDED: density]
存储组织 [DATA_NEEDED: organization (bit width)] [DATA_NEEDED: organization]
接口类型 [DATA_NEEDED: interface type (async/ONFI/Toggle DDR)] —
电源电压 [DATA_NEEDED: supply voltage] —
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Max Clock / Access Speed [DATA_NEEDED: max clock frequency or access time] —
Program Time (typ) [DATA_NEEDED: typical page program time] —
Erase Time (typ) [DATA_NEEDED: typical block erase time] —
Endurance (P/E cycles) [DATA_NEEDED: program/erase endurance] —
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
封装 [DATA_NEEDED: package type and pin count] [DATA_NEEDED: package and ball count]
安装类型 Surface Mount Surface Mount
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Technology — 3D V-NAND
Cell Type — [DATA_NEEDED: cell type TLC/MLC]
Supply Voltage VCC — [DATA_NEEDED: supply voltage]
VCCQ Voltage — [DATA_NEEDED: VCCQ]
接口 — [DATA_NEEDED: interface type/toggle mode]
Speed Grade Suffix — BCK0
MSL 等级 — [DATA_NEEDED: MSL level]

数据手册与资源

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