K9F2808Q0B vs K9F6408U0B 对比
详细并排对比 K9F2808Q0B 出自 Samsung Electronics 和 K9F6408U0B 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K9F2808Q0B | K9F6408U0B |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 停产 | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $3.20 |
| 存储器类型 | SLC NAND Flash (parallel) | NAND Flash |
| Density | 128 Mbit | — |
| 存储组织 | 16M x 8 | — |
| Operating Voltage (VCC) | 1.7 V to 1.95 V | 2.7 V to 3.6 V |
| Read Access Speed | 50 ns | — |
| Cell Type | SLC (1 bit/cell) | — |
| 接口 | 8-bit multiplexed address/data | 8-bit multiplexed command/address/data I/O |
| 封装 | 63-pin TBGA | 44-TSOP2 |
| Temperature Grade | C (commercial), I (industrial) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | 528 bytes (512 data + 16 spare) |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block organization from datasheet] |
| Typical Read Current (Icc1) | [DATA_NEEDED: Icc1] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | 100K program/erase cycles |
| RoHS 状态 | unknown | [DATA_NEEDED: RoHS status] |
| Production Status | Mass production (per legacy datasheet); now EOL/obsolete | — |
| Memory Organization | — | 8M x 8 bit (64Mbit) |
| Access Time / Cycle Time | — | 50 ns |
| Write Protect | — | Yes (WP pin) |
| Ready/Busy Output | — | Yes (R/B open-drain) |
| Operating Temperature (TCB0 grade) | — | 0C to 70C |
| Operating Temperature (TIB0 grade) | — | -40C to 85C |
| Production Status (per datasheet) | — | Mass Production (legacy; now obsolete) |