K9F2808Q0B vs K9F6408U0B Comparison
Detailed side-by-side comparison of K9F2808Q0B by Samsung Electronics and K9F6408U0B by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K9F2808Q0B - 128Mb SLC NAND Flash 1.8V 63-TBGA | Samsung
K9F2808Q0B ✗ End of Life
Specification Comparison
| Parameter | K9F2808Q0B | K9F6408U0B |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | End of Life | Obsolete |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $3.20 |
| Memory Type | SLC NAND Flash (parallel) | NAND Flash |
| Density | 128 Mbit | — |
| Organization | 16M x 8 | — |
| Operating Voltage (VCC) | 1.7 V to 1.95 V | 2.7 V to 3.6 V |
| Read Access Speed | 50 ns | — |
| Cell Type | SLC (1 bit/cell) | — |
| Interface | 8-bit multiplexed address/data | 8-bit multiplexed command/address/data I/O |
| Package | 63-pin TBGA | 44-TSOP2 |
| Temperature Grade | C (commercial), I (industrial) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | 528 bytes (512 data + 16 spare) |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block organization from datasheet] |
| Typical Read Current (Icc1) | [DATA_NEEDED: Icc1] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | 100K program/erase cycles |
| RoHS Status | unknown | [DATA_NEEDED: RoHS status] |
| Production Status | Mass production (per legacy datasheet); now EOL/obsolete | — |
| Memory Organization | — | 8M x 8 bit (64Mbit) |
| Access Time / Cycle Time | — | 50 ns |
| Write Protect | — | Yes (WP pin) |
| Ready/Busy Output | — | Yes (R/B open-drain) |
| Operating Temperature (TCB0 grade) | — | 0C to 70C |
| Operating Temperature (TIB0 grade) | — | -40C to 85C |
| Production Status (per datasheet) | — | Mass Production (legacy; now obsolete) |