K9JUGY8J5C-CCK0 vs K9HUGY8J5B-BCK0 对比

详细并排对比 K9JUGY8J5C-CCK0 出自 Samsung Electronics 和 K9HUGY8J5B-BCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9JUGY8J5C-CCK0 K9JUGY8J5C-CCK0 - 1Tb TLC V-NAND Flash | Samsung

K9JUGY8J5C-CCK0 - 1Tb TLC V-NAND Flash | Samsung

K9JUGY8J5C-CCK0 ✓ 量产中
Samsung Electronics
K9HUGY8J5B-BCK0 K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9HUGY8J5B-BCK0 ✓ 量产中

规格对比

参数 K9JUGY8J5C-CCK0 K9HUGY8J5B-BCK0
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $7.60 $0.00
Manufacturer Samsung Electronics Samsung Electronics
存储器类型 NAND Flash - V-NAND (TLC) NAND Flash (3D V-NAND)
Density 1 Tb (128 GB) [DATA_NEEDED: device density]
Cell Type TLC (Triple-Level Cell) [DATA_NEEDED: SLC/MLC/TLC/QLC]
Technology Generation V6 (6th-gen V-NAND, 128-layer) —
存储组织 [DATA_NEEDED: page/block organization] [DATA_NEEDED: page/block organization]
接口 [DATA_NEEDED: toggle/ONFI mode] [DATA_NEEDED: asynchronous/toggle DDR]
封装 [DATA_NEEDED: BGA package code and dimensions] [DATA_NEEDED: package code, e.g. FBGA]
安装类型 Surface Mount Surface Mount
Supply Voltage (VCC) [DATA_NEEDED: VCC range] [DATA_NEEDED: VCC range]
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ range] [DATA_NEEDED: VCCQ range]
Read Latency [DATA_NEEDED: tR] —
Program Time [DATA_NEEDED: tPROG] —
Endurance (P/E cycles) [DATA_NEEDED: rated P/E cycles] —
工作温度 [DATA_NEEDED: temperature range] [DATA_NEEDED: temperature range]
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
Product Family — K9HUG (V-NAND flash)
Bus Width — [DATA_NEEDED: x8 or x16]
Page Program Time — [DATA_NEEDED: tPROG]
Page Read Time — [DATA_NEEDED: tR]
Block Erase Time — [DATA_NEEDED: tBERS]
Endurance — [DATA_NEEDED: P/E cycles]

数据手册与资源

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