K9JUGY8J5C-CCK0 vs K9LUGY8J7D-CCK0 对比

详细并排对比 K9JUGY8J5C-CCK0 出自 Samsung Electronics 和 K9LUGY8J7D-CCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9JUGY8J5C-CCK0 K9JUGY8J5C-CCK0 - 1Tb TLC V-NAND Flash | Samsung

K9JUGY8J5C-CCK0 - 1Tb TLC V-NAND Flash | Samsung

K9JUGY8J5C-CCK0 ✓ 量产中
Samsung Electronics
K9LUGY8J7D-CCK0 K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics

K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics

K9LUGY8J7D-CCK0 ✓ 量产中

规格对比

参数 K9JUGY8J5C-CCK0 K9LUGY8J7D-CCK0
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $7.60 $0.00
Manufacturer Samsung Electronics Samsung Electronics
存储器类型 NAND Flash - V-NAND (TLC) NAND Flash (V-NAND)
Density 1 Tb (128 GB) [DATA_NEEDED: total density (bits)]
Cell Type TLC (Triple-Level Cell) —
Technology Generation V6 (6th-gen V-NAND, 128-layer) —
存储组织 [DATA_NEEDED: page/block organization] —
接口 [DATA_NEEDED: toggle/ONFI mode] [DATA_NEEDED: interface type / toggle DDR mode]
封装 [DATA_NEEDED: BGA package code and dimensions] BGA (surface mount)
安装类型 Surface Mount Surface Mount
Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ range] —
Read Latency [DATA_NEEDED: tR] —
Program Time [DATA_NEEDED: tPROG] —
Endurance (P/E cycles) [DATA_NEEDED: rated P/E cycles] —
工作温度 [DATA_NEEDED: temperature range] [DATA_NEEDED: temperature range (C)]
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
Memory Cell Type — TLC (Triple-Level Cell)
Technology — V-NAND (vertical NAND)
Page Size — [DATA_NEEDED: page size]
Block Size — [DATA_NEEDED: block size]
电源电压 — [DATA_NEEDED: supply voltage (V)]
Program/Erase Endurance — [DATA_NEEDED: P/E cycles]
Data Retention — [DATA_NEEDED: retention]
Speed Grade Code — CCK0 (per Samsung part-number convention)

数据手册与资源

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