K9KUGY8J7C-CCK0 vs K9HUGY8J5B-BCK0 对比

详细并排对比 K9KUGY8J7C-CCK0 出自 Samsung Electronics 和 K9HUGY8J5B-BCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9KUGY8J7C-CCK0 K9KUGY8J7C-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics

K9KUGY8J7C-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics

K9KUGY8J7C-CCK0 ✓ 量产中
Samsung Electronics
K9HUGY8J5B-BCK0 K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9HUGY8J5B-BCK0 ✓ 量产中

规格对比

参数 K9KUGY8J7C-CCK0 K9HUGY8J5B-BCK0
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $0.00
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9-Series V-NAND K9HUG (V-NAND flash)
存储器类型 NAND Flash NAND Flash (3D V-NAND)
Cell Type TLC (Triple-Level Cell) [DATA_NEEDED: SLC/MLC/TLC/QLC]
Technology Samsung V-NAND (3D NAND) —
Density [DATA_NEEDED: total device density] [DATA_NEEDED: device density]
存储组织 [DATA_NEEDED: page/block/plane organization] [DATA_NEEDED: page/block organization]
接口 [DATA_NEEDED: asynchronous/synchronous toggle interface mode] [DATA_NEEDED: asynchronous/toggle DDR]
电源电压 [DATA_NEEDED: VCC supply voltage range] —
Page Size [DATA_NEEDED: page size] —
Program/Erase Cycles [DATA_NEEDED: endurance rating] —
Package Type BGA —
工作温度 Commercial grade (per -CCK0 suffix); exact range [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range]
安装类型 Surface Mount Surface Mount
RoHS 状态 Lead free / RoHS (per Samsung K9-family product pages) Compliant
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
Bus Width — [DATA_NEEDED: x8 or x16]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Supply Voltage (VCCQ) — [DATA_NEEDED: VCCQ range]
Page Program Time — [DATA_NEEDED: tPROG]
Page Read Time — [DATA_NEEDED: tR]
Block Erase Time — [DATA_NEEDED: tBERS]
Endurance — [DATA_NEEDED: P/E cycles]
封装 — [DATA_NEEDED: package code, e.g. FBGA]

数据手册与资源

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