K9LUGY8J7D-CCK0 vs K9IUGY8J7B-CCK0 对比
详细并排对比 K9LUGY8J7D-CCK0 出自 Samsung Electronics 和 K9IUGY8J7B-CCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
K9LUGY8J7D-CCK0 ✓ 量产中规格对比
| 参数 | K9LUGY8J7D-CCK0 | K9IUGY8J7B-CCK0 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | EEPROM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $1.00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| 存储器类型 | NAND Flash (V-NAND) | NAND Flash, 3D V-NAND TLC |
| Memory Cell Type | TLC (Triple-Level Cell) | — |
| Technology | V-NAND (vertical NAND) | — |
| 封装 | BGA (surface mount) | — |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| 接口 | [DATA_NEEDED: interface type / toggle DDR mode] | — |
| Density | [DATA_NEEDED: total density (bits)] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| 电源电压 | [DATA_NEEDED: supply voltage (V)] | — |
| 工作温度 | [DATA_NEEDED: temperature range (C)] | [DATA_NEEDED: operating temperature range] |
| Program/Erase Endurance | [DATA_NEEDED: P/E cycles] | — |
| Data Retention | [DATA_NEEDED: retention] | — |
| Speed Grade Code | CCK0 (per Samsung part-number convention) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Memory Density | — | 1 Tb (Tera bit) |
| Cell Type | — | TLC (3 bits per cell) |
| V-NAND Generation | — | V6 (6th generation) |
| Process Node / Layer Count | — | 4448-128L (128-layer) |
| 接口类型 | — | [DATA_NEEDED: bus interface type] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC voltage] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ voltage] |
| 数据总线宽度 | — | [DATA_NEEDED: data bus width] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E cycle endurance] |
| Package Type | — | [DATA_NEEDED: exact package code] |