K9LUGY8J7D-CCK0 vs K9IUGY8J7B-CCK0 비교
다음의 상세 나란히 비교: K9LUGY8J7D-CCK0 제조: Samsung Electronics 및 K9IUGY8J7B-CCK0 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Samsung Electronics
K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
K9LUGY8J7D-CCK0 ✓ 활성사양 비교
| 파라미터 | K9LUGY8J7D-CCK0 | K9IUGY8J7B-CCK0 |
|---|---|---|
| 브랜드 | Samsung Electronics | Samsung Electronics |
| 카테고리 | Memory ICs | EEPROM |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.00 | $1.00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| 메모리 유형 | NAND Flash (V-NAND) | NAND Flash, 3D V-NAND TLC |
| Memory Cell Type | TLC (Triple-Level Cell) | — |
| Technology | V-NAND (vertical NAND) | — |
| 패키지 | BGA (surface mount) | — |
| 실장 유형 | Surface Mount | Surface Mount (BGA) |
| 인터페이스 | [DATA_NEEDED: interface type / toggle DDR mode] | — |
| Density | [DATA_NEEDED: total density (bits)] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| 공급 전압 | [DATA_NEEDED: supply voltage (V)] | — |
| 동작 온도 | [DATA_NEEDED: temperature range (C)] | [DATA_NEEDED: operating temperature range] |
| Program/Erase Endurance | [DATA_NEEDED: P/E cycles] | — |
| Data Retention | [DATA_NEEDED: retention] | — |
| Speed Grade Code | CCK0 (per Samsung part-number convention) | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Memory Density | — | 1 Tb (Tera bit) |
| Cell Type | — | TLC (3 bits per cell) |
| V-NAND Generation | — | V6 (6th generation) |
| Process Node / Layer Count | — | 4448-128L (128-layer) |
| 인터페이스 유형 | — | [DATA_NEEDED: bus interface type] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC voltage] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ voltage] |
| 데이터 버스 폭 | — | [DATA_NEEDED: data bus width] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E cycle endurance] |
| Package Type | — | [DATA_NEEDED: exact package code] |