K9PDG08U5M vs K9UMGB8U7M 对比

详细并排对比 K9PDG08U5M 出自 Samsung Electronics 和 K9UMGB8U7M 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9PDG08U5M K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M ✗ 停产
Samsung Electronics
K9UMGB8U7M K9UMGB8U7M - Samsung NAND Flash Memory | Samsung Electronics

K9UMGB8U7M - Samsung NAND Flash Memory | Samsung Electronics

K9UMGB8U7M ✓ 量产中

规格对比

参数 K9PDG08U5M K9UMGB8U7M
品牌 Samsung Electronics Samsung Electronics
分类 EEPROM Memory ICs
生命周期状态 停产 有效
库存状态 有库存 有库存
单价(USD) $4.20 $0.00
存储器类型 NAND Flash (SLC) NAND Flash
Density 4 Gbit [DATA_NEEDED: Memory Density]
存储组织 x8 (multiplexed I/O) [DATA_NEEDED: Memory Organization]
电源电压 [DATA_NEEDED: supply voltage range] [DATA_NEEDED: Supply Voltage]
封装 TSOP1-48 [DATA_NEEDED: Package Type]
安装类型 Surface Mount [DATA_NEEDED: Mounting Type]
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: Page Size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: Block Size]
Page Read Time [DATA_NEEDED: page read time] —
Page Program Time [DATA_NEEDED: page program time] —
Block Erase Time [DATA_NEEDED: block erase time] —
Access Interface Asynchronous multiplexed address/data, CLE/ALE control —
Ready/Busy Output Yes (R/B, open-drain) —
Write Protect Pin Yes (/WP) —
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature Range]
Endurance [DATA_NEEDED: program/erase cycles] [DATA_NEEDED: Program/Erase Cycles]
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS Status]
Manufacturer — Samsung Electronics
Family — K9U series NAND Flash
Data Interface — [DATA_NEEDED: Data Interface]
Cell Type — [DATA_NEEDED: Cell Type (SLC/MLC/TLC)]
Read Time — [DATA_NEEDED: Read Time]
Program Time — [DATA_NEEDED: Program Time]

数据手册与资源

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