K9PDG08U5M vs K9UMGB8U7M 比較

詳細な並列比較: K9PDG08U5M メーカー: Samsung Electronics および K9UMGB8U7M メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

Samsung Electronics
K9PDG08U5M K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M ✗ 生産終了
Samsung Electronics
K9UMGB8U7M K9UMGB8U7M - Samsung NAND Flash Memory | Samsung Electronics

K9UMGB8U7M - Samsung NAND Flash Memory | Samsung Electronics

K9UMGB8U7M ✓ 生産中

仕様比較

パラメータ K9PDG08U5M K9UMGB8U7M
ブランド Samsung Electronics Samsung Electronics
カテゴリ EEPROM Memory ICs
ライフサイクル状態 製造終了 有効
在庫状況 In Stock In Stock
単価(USD) $4.20 $0.00
メモリタイプ NAND Flash (SLC) NAND Flash
Density 4 Gbit [DATA_NEEDED: Memory Density]
メモリ構成 x8 (multiplexed I/O) [DATA_NEEDED: Memory Organization]
電源電圧 [DATA_NEEDED: supply voltage range] [DATA_NEEDED: Supply Voltage]
パッケージ TSOP1-48 [DATA_NEEDED: Package Type]
実装タイプ Surface Mount [DATA_NEEDED: Mounting Type]
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: Page Size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: Block Size]
Page Read Time [DATA_NEEDED: page read time] —
Page Program Time [DATA_NEEDED: page program time] —
Block Erase Time [DATA_NEEDED: block erase time] —
Access Interface Asynchronous multiplexed address/data, CLE/ALE control —
Ready/Busy Output Yes (R/B, open-drain) —
Write Protect Pin Yes (/WP) —
動作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature Range]
Endurance [DATA_NEEDED: program/erase cycles] [DATA_NEEDED: Program/Erase Cycles]
RoHS ステータス [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS Status]
Manufacturer — Samsung Electronics
Family — K9U series NAND Flash
Data Interface — [DATA_NEEDED: Data Interface]
Cell Type — [DATA_NEEDED: Cell Type (SLC/MLC/TLC)]
Read Time — [DATA_NEEDED: Read Time]
Program Time — [DATA_NEEDED: Program Time]

データシート&リソース

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