K9PDG08U5M vs K9XXG08U0M 对比
详细并排对比 K9PDG08U5M 出自 Samsung Electronics 和 K9XXG08U0M 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K9PDG08U5M | K9XXG08U0M |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | EEPROM | Memory ICs |
| 生命周期状态 | 停产 | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.20 | $5.60 |
| 存储器类型 | NAND Flash (SLC) | NAND Flash |
| Density | 4 Gbit | 8 G-bit |
| 存储组织 | x8 (multiplexed I/O) | 1G x 8 bit |
| 电源电压 | [DATA_NEEDED: supply voltage range] | 2.7 V to 3.6 V (3.3V device) |
| 封装 | TSOP1-48 | 48-pin TSOP-I |
| 安装类型 | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Page Read Time | [DATA_NEEDED: page read time] | 20 us |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Access Interface | Asynchronous multiplexed address/data, CLE/ALE control | — |
| Ready/Busy Output | Yes (R/B, open-drain) | — |
| Write Protect Pin | Yes (/WP) | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Spare Area | — | 256 M-bit (per K9K8G08U0M) |
| 接口 | — | 8-bit parallel NAND (command/address/data multiplexed) |
| Access Interface Standard | — | Samsung legacy NAND command set |
| Bad Block Management | — | Factory bad block marking (host-managed ECC required) |
| Cell Type | — | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) |
| ECC Requirement | — | External ECC by host controller |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |