K9QDGB8U7M vs K9PKGY8S7M-CCK0 对比

详细并排对比 K9QDGB8U7M 出自 Samsung Electronics 和 K9PKGY8S7M-CCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9QDGB8U7M K9QDGB8U7M - Samsung NAND Flash Memory | Samsung Electronics

K9QDGB8U7M - Samsung NAND Flash Memory | Samsung Electronics

K9QDGB8U7M Unknown
Samsung Electronics
K9PKGY8S7M-CCK0 K9PKGY8S7M-CCK0 - 128Gb 3D V-NAND MLC Flash | Samsung

K9PKGY8S7M-CCK0 - 128Gb 3D V-NAND MLC Flash | Samsung

K9PKGY8S7M-CCK0 ✓ 量产中

规格对比

参数 K9QDGB8U7M K9PKGY8S7M-CCK0
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 Unknown 有效
库存状态 有库存 有库存
单价(USD) $0.00 $9.40
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9 NAND Flash —
存储器类型 NAND Flash NAND Flash
Density [DATA_NEEDED: Density] —
存储组织 [DATA_NEEDED: Organization] —
接口类型 [DATA_NEEDED: Interface Type] —
电源电压 [DATA_NEEDED: Supply Voltage] [DATA_NEEDED: supply voltage]
Page Size [DATA_NEEDED: Page Size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: Block Size] [DATA_NEEDED: block size]
Program/Erase Endurance [DATA_NEEDED: Program/Erase Endurance] —
Read Latency [DATA_NEEDED: Read Latency] —
Package Type BGA (surface mount) —
工作温度 [DATA_NEEDED: Operating Temperature] [DATA_NEEDED: operating temperature range]
安装类型 Surface Mount Surface Mount
RoHS 状态 [DATA_NEEDED: RoHS Status] Lead free / RoHS compliant
Memory Capacity — 128 Gb (16 GB)
Cell Architecture — 3D V-NAND, MLC (2 bits/cell)
V-NAND Layers — 24 layers
封装 — BGA
接口 — Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family)
Program/Erase Cycles — [DATA_NEEDED: P/E cycle endurance]
Application Domain — Enterprise SSD (e.g., Samsung 845DC Pro)
Access Time (tR) — [DATA_NEEDED: read cycle time]
Data Retention — [DATA_NEEDED: retention specification]

数据手册与资源

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