M25P16-VMN3PB vs M25P16-VMN3TPB 对比

详细并排对比 M25P16-VMN3PB 出自 Micron Technology 和 M25P16-VMN3TPB 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M25P16-VMN3PB M25P16-VMN3PB - 16Mb SPI NOR Flash 75MHz SOIC-8 | Micron

M25P16-VMN3PB - 16Mb SPI NOR Flash 75MHz SOIC-8 | Micron

M25P16-VMN3PB ✗ 停产
Micron Technology
M25P16-VMN3TPB M25P16-VMN3TPB - 16Mbit SPI NOR Flash 75MHz | Micron

M25P16-VMN3TPB - 16Mbit SPI NOR Flash 75MHz | Micron

M25P16-VMN3TPB ✓ 量产中

规格对比

参数 M25P16-VMN3PB M25P16-VMN3TPB
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 停产 有效
库存状态 有库存 有库存
单价(USD) $0.98 $0.63
存储器类型 Serial NOR Flash, SLC NOR Flash (Serial SPI)
Memory Density 16 Mbit (16,777,216 bits) —
存储组织 2 M x 8 (2,000,000 bytes x 8) 2 Mbyte x 8
接口 SPI SPI Serial
最大时钟频率 75 MHz 75 MHz
电源电压 2.7 V to 3.6 V 2.7 V to 3.6 V (single supply)
Write/Erase Endurance 100,000 cycles —
工作温度 -40C to +125C -40C to +85C
Temperature Grade Automotive —
封装 8-SO (SOIC, 208 mil SOP) 8-SOIC (3.90 mm width, 150 mil)
Number of Terminals 8 —
Maximum Seated Height 1.75 mm —
安装类型 Surface Mount Surface Mount
Product Longevity Program Yes —
Access Time 15 ns 15 ns
Write Protection Hardware (WP#) and software block protection Advanced write-protection mechanisms
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
存储容量 — 16 Mbit (2 M x 8)
Page Program Time — 0.64 ms typ (256-byte page)
Sector Erase Time — 0.6 s typ (512 Kbit sector)
Bulk Erase Time — 13 s typ (16 Mbit)
Sector Count — 32 sectors of 64 Kbyte
Packaging — Tape & Reel (TPB suffix)

数据手册与资源

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