M25P16-VMN3PB vs M25P80-VMN3PB 对比

详细并排对比 M25P16-VMN3PB 出自 Micron Technology 和 M25P80-VMN3PB 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M25P16-VMN3PB M25P16-VMN3PB - 16Mb SPI NOR Flash 75MHz SOIC-8 | Micron

M25P16-VMN3PB - 16Mb SPI NOR Flash 75MHz SOIC-8 | Micron

M25P16-VMN3PB ✗ 停产
Micron Technology
M25P80-VMN3PB M25P80-VMN3PB - 8Mbit SPI NOR Flash 75MHz SOIC-8 | Micron

M25P80-VMN3PB - 8Mbit SPI NOR Flash 75MHz SOIC-8 | Micron

M25P80-VMN3PB ✗ 停产

规格对比

参数 M25P16-VMN3PB M25P80-VMN3PB
品牌 Micron Technology Micron Technology
分类 Memory ICs EEPROM
生命周期状态 停产 停产
库存状态 有库存 有库存
单价(USD) $0.98 $0.75
存储器类型 Serial NOR Flash, SLC FLASH - NOR Memory IC
Memory Density 16 Mbit (16,777,216 bits) —
存储组织 2 M x 8 (2,000,000 bytes x 8) 1M x 8 bit
接口 SPI SPI
最大时钟频率 75 MHz 75 MHz
电源电压 2.7 V to 3.6 V 2.7 V to 3.6 V
Write/Erase Endurance 100,000 cycles —
工作温度 -40C to +125C [DATA_NEEDED: operating temperature range]
Temperature Grade Automotive —
封装 8-SO (SOIC, 208 mil SOP) 8-SO (SOIC-8)
Number of Terminals 8 —
Maximum Seated Height 1.75 mm —
安装类型 Surface Mount Surface Mount
Product Longevity Program Yes —
Access Time 15 ns 8 ns
Write Protection Hardware (WP#) and software block protection —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
存储容量 — 8 Mbit (1M x 8)
Page Program Time — 0.64 ms typ (up to 256 bytes)
Erase Capability — Sector erase and bulk erase
Write Protect — Hardware write protect (W pin)
Hold Function — Yes (HOLD pin)
Program/Erase Endurance — [DATA_NEEDED: program/erase endurance cycles]

数据手册与资源

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