M25P40-VMN3PB vs M25P80-VMN3PB 对比

详细并排对比 M25P40-VMN3PB 出自 Micron Technology 和 M25P80-VMN3PB 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M25P40-VMN3PB M25P40-VMN3PB - 4Mbit SPI NOR Flash 75MHz | Micron

M25P40-VMN3PB - 4Mbit SPI NOR Flash 75MHz | Micron

M25P40-VMN3PB Obsolete
Micron Technology
M25P80-VMN3PB M25P80-VMN3PB - 8Mbit SPI NOR Flash 75MHz SOIC-8 | Micron

M25P80-VMN3PB - 8Mbit SPI NOR Flash 75MHz SOIC-8 | Micron

M25P80-VMN3PB ✗ 停产

规格对比

参数 M25P40-VMN3PB M25P80-VMN3PB
品牌 Micron Technology Micron Technology
分类 Memory ICs EEPROM
生命周期状态 Obsolete 停产
库存状态 有库存 有库存
单价(USD) $0.62 $0.75
存储器类型 FLASH - NOR FLASH - NOR Memory IC
存储容量 4 Mbit (512K x 8) 8 Mbit (1M x 8)
存储组织 512K x 8 (x1 serial) 1M x 8 bit
最大时钟频率 75 MHz 75 MHz
接口 SPI Serial SPI
电源电压 2.3 V to 3.6 V 2.7 V to 3.6 V
工作温度 -40C to +125C [DATA_NEEDED: operating temperature range]
封装 / 外壳 8-SOIC (3.90 mm width) —
安装类型 Surface Mount Surface Mount
Packaging Tube —
Temperature Grade Automotive —
Product Longevity Program Yes (start date 5/4/2011) —
Sector Size [DATA_NEEDED: sector organization] —
Page Size [DATA_NEEDED: page size] —
Write Protection Advanced write-protection mechanisms —
HOLD Pin Yes —
Technology CMOS, SLC NOR —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Page Program Time — 0.64 ms typ (up to 256 bytes)
封装 — 8-SO (SOIC-8)
Erase Capability — Sector erase and bulk erase
Write Protect — Hardware write protect (W pin)
Hold Function — Yes (HOLD pin)
Access Time — 8 ns
Program/Erase Endurance — [DATA_NEEDED: program/erase endurance cycles]

数据手册与资源

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