M29F160FT55N3F2 vs M29F800FT55N3F2 对比

详细并排对比 M29F160FT55N3F2 出自 Micron Technology 和 M29F800FT55N3F2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29F160FT55N3F2 M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 ✓ 量产中
Micron Technology
M29F800FT55N3F2 M29F800FT55N3F2 - 8Mbit 5V NOR Flash 55ns | Micron

M29F800FT55N3F2 - 8Mbit 5V NOR Flash 55ns | Micron

M29F800FT55N3F2 ✓ 量产中

规格对比

参数 M29F160FT55N3F2 M29F800FT55N3F2
品牌 Micron Technology Micron Technology
分类 Flash Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.90 $0.78
存储器类型 NOR Flash (Parallel, Asynchronous) NOR Flash, Parallel
Density 16 Mbit (16777 kbits) —
存储组织 1M x 16 / 2M x 8 1M x 8 bit / 512K x 16 bit
Number of Words 1000 k —
Bits per Word 16 bits —
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V (operating 4.5 V) —
接口 Parallel Parallel
Synchronous / Asynchronous Asynchronous —
Boot Block Location Top boot block (FT) —
工作温度 -40C to +125C [DATA_NEEDED: operating temperature range]
封装 48-Pin TSOP 48-pin TSOP
安装类型 Surface Mount Surface Mount
Packaging Tape & Reel Tape & Reel (T/R)
Program / Erase Embedded byte/word program algorithms (controller on-chip) —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
存储容量 — 8 Mbit
电源电压 — 5 V (single supply)
Boot Block Architecture — Top boot block (T)
Programming Voltage — 5.0 V VCC (no 12 V VPP required)
Erase Block Size — [DATA_NEEDED: block size]
Data Retention — [DATA_NEEDED: data retention]
Program/Erase Cycles — [DATA_NEEDED: endurance cycles]
Active Read Current — [DATA_NEEDED: ICC read]

数据手册与资源

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