M29F200FB55N3E2 vs M29F200FT55N3E2 对比
详细并排对比 M29F200FB55N3E2 出自 Micron Technology 和 M29F200FT55N3E2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | M29F200FB55N3E2 | M29F200FT55N3E2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 停产 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.45 | $0.00 |
| 存储器类型 | NOR Flash, Parallel | NOR Flash |
| Density | 2 Mbit (2097 kbits) | 2 Mbit (2097 kbits) |
| 存储组织 | 256K x 8 / 128K x 16 | — |
| Number of Words | 128 K | 128 k |
| Bits per Word | 16 bits | 16 bits |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | — |
| Boot Block Architecture | Bottom Boot Block | — |
| 接口 | Parallel, 8/16-bit selectable | Parallel |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| 工作温度 | -40C to +125C | -40C to +125C |
| Package Type | 48-pin TSOP I | — |
| 安装类型 | Surface Mount | Surface Mount |
| Memory Cell Type | SLC NOR | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Packaging | Tray | Tray |
| Memory Organization | — | 256K x 8 / 128K x 16 |
| 电源电压 | — | 5 V |
| Boot Block | — | Top boot block |
| Program / Erase | — | Embedded program/erase controller |
| 封装 | — | 48-TSOP I |
| Bus Mode | — | Byte (x8) / Word (x16) selectable |