M29F200FB55N3F2 vs M29F400FB55N3F2 对比
详细并排对比 M29F200FB55N3F2 出自 Micron Technology 和 M29F400FB55N3F2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | M29F200FB55N3F2 | M29F400FB55N3F2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.20 | $2.95 |
| 存储器类型 | Parallel NOR Flash | NOR Flash |
| Density | 2 Mbit (2097 kbits) | 4 Mbit (4194 kbit) |
| 存储组织 | 256K x 8 bit / 128K x 16 bit | 256K x 16 / 512K x 8 |
| Number of Words | 128 K (x16 mode) | — |
| Bits per Word | 16 bits | — |
| Supply Voltage (VCC) | 5 V | — |
| Access Time | 55 ns | 55 ns |
| Boot Block Architecture | Bottom Boot Block (FB) | — |
| Programming | Embedded byte/word program algorithm | — |
| Erase | Embedded block erase controller | — |
| 工作温度 | -40C to +125C | -40C to +125C |
| 封装 | 48-TSOP I | 48-TSOP I |
| 安装类型 | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | — |
| 接口 | Parallel | Parallel |
| RoHS 状态 | [DATA_NEEDED: RoHS compliance status] | Compliant (lead-free build per F2 suffix) |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| 电源电压 | — | 5 V |
| Boot Block | — | Bottom boot block |
| Program/Erase Controller | — | Embedded byte/word program algorithms |
| Standard Package Quantity | — | 1500 units (Tape & Reel) |
| Active/Standby Current | — | [DATA_NEEDED: active and standby current] |
| Erase/Program Endurance | — | [DATA_NEEDED: endurance cycles] |
| Data Retention | — | [DATA_NEEDED: retention years] |
| VIO Range | — | [DATA_NEEDED: I/O voltage range] |