M29W064FB70N3E vs M29W064FB70N3F 对比

详细并排对比 M29W064FB70N3E 出自 Micron Technology 和 M29W064FB70N3F 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W064FB70N3E M29W064FB70N3E - 64Mbit 3V NOR Flash 70ns TSOP-48 | Micron

M29W064FB70N3E - 64Mbit 3V NOR Flash 70ns TSOP-48 | Micron

M29W064FB70N3E ✓ 量产中
Micron Technology
M29W064FB70N3F M29W064FB70N3F - 64Mb NOR Flash 70ns AEC-Q100 | Micron Technology

M29W064FB70N3F - 64Mb NOR Flash 70ns AEC-Q100 | Micron Technology

M29W064FB70N3F Obsolete

规格对比

参数 M29W064FB70N3E M29W064FB70N3F
品牌 Micron Technology Micron Technology
分类 Flash Memory ICs
生命周期状态 有效 Obsolete
库存状态 有库存 有库存
单价(USD) $0.00 $1.20
存储器类型 NOR Flash, Parallel NOR Flash, Parallel
存储容量 64 Mbit (8M x 8 / 4M x 16) —
电源电压 3.0 V to 3.6 V (3V/3.3V) 2.7 V to 3.6 V
Access Time 70 ns 70 ns
接口 Parallel, CFI compliant Parallel, x8/x16 selectable (BYTE#)
Boot Block Bottom boot block (FB variant) —
封装 48-Pin TSOP 48-TSOP
安装类型 Surface Mount Surface Mount
工作温度 -40C to +125C -40C to +125C
Organization Switching Byte/Word selectable via BYTE# pin —
Reset/Power-Down RP# pin —
Data Protection Block protection, WP# hardware protection —
Device Signature Electronic signature for device identification —
Packaging Tray Tape & Reel (TR suffix)
RoHS 状态 Compliant Compliant (F suffix)
Brand Source Micron Technology / Alliance Memory, Inc. (second source) —
Erase/Program Mode Word/byte program, block erase, chip erase —
Density — 64 Mbit
存储组织 — 8M x8 / 4M x16
Boot Block Configuration — Bottom boot block (FB)
Automotive Qualification — AEC-Q100 qualified
Status Polling — RY/BY# hardware pin + data polling
Erase/Program Interface — Command set (M29W family compatible)
Part Status — Obsolete

数据手册与资源

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