M29W160FB70N3E vs M29W800FT70ZA3SE 对比
详细并排对比 M29W160FB70N3E 出自 Micron Technology 和 M29W800FT70ZA3SE 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
M29W800FT70ZA3SE - 8Mbit 70ns NOR Flash | Micron | Embedded
M29W800FT70ZA3SE ✓ 量产中规格对比
| 参数 | M29W160FB70N3E | M29W800FT70ZA3SE |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | EEPROM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.58 | $1.38 |
| 存储器类型 | FLASH - NOR | NOR Flash (Parallel) |
| 存储容量 | 16 Mbit (2M x8 / 1M x16) | 8 Mbit |
| Access Time | 70 ns | 70 ns |
| 接口 | Parallel | Parallel |
| Supply Voltage (VCC) | 3.0 V to 3.6 V | — |
| Programming Voltage | Single supply (no separate VPP required) | — |
| Bus Configuration | x8 / x16 selectable (BYTE# pin) | — |
| Architecture | Boot block | — |
| 封装 / 外壳 | 48-TFSOP (0.724 in, 18.40 mm width) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Packaging | Tray | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Status Output | Data polling / toggle bit | — |
| Block Protection | Yes (boot block protection) | — |
| 存储组织 | — | 512K x 16 |
| Technology | — | SLC |
| 电源电压 | — | 2.7 V to 3.6 V |
| 封装 | — | 48-TFBGA (6x8 mm) |
| Programming Interface | — | CFI command set |
| Boot Block Architecture | — | Top boot (FT = top boot block) |
| Density | — | 8 Mb |
| FBGA Code | — | [DATA_NEEDED: FBGA code] |
| Chipset Validation | — | N/A |
| RoHS 状态 | — | [DATA_NEEDED: RoHS status] |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance] |