M29W320DT70N3F vs M29W320DB70N3E 对比

详细并排对比 M29W320DT70N3F 出自 Micron Technology 和 M29W320DB70N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W320DT70N3F M29W320DT70N3F - 32Mbit NOR Flash 70ns TSOP-48 | Micron

M29W320DT70N3F - 32Mbit NOR Flash 70ns TSOP-48 | Micron

M29W320DT70N3F ✓ 量产中
Micron Technology
M29W320DB70N3E M29W320DB70N3E - 32Mbit 70ns NOR Flash 48-TSOP | Micron

M29W320DB70N3E - 32Mbit 70ns NOR Flash 48-TSOP | Micron

M29W320DB70N3E ✓ 量产中

规格对比

参数 M29W320DT70N3F M29W320DB70N3E
品牌 Micron Technology Micron Technology
分类 Memory ICs Flash
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.95 $1.95
存储器类型 FLASH - NOR NOR Flash
存储容量 32 Mbit (4M x 8, 2M x 16) —
Access Speed 70 ns —
接口 Parallel (Byte-wide) Parallel
Supply Voltage - VCC 2.7 V to 3.6 V —
VPP Fast Program Voltage 12 V (optional) 12 V (optional)
Boot Block Organization Top boot block (DT suffix) —
Block Architecture Non-uniform parameter blocks Non-uniform parameter blocks, boot block (bottom boot, DB type)
封装 / 外壳 48-TFSOP (0.724 in, 18.40 mm width) —
安装类型 Surface Mount Surface Mount
Packaging Tape & Reel (TR suffix) —
Temperature Grade Automotive —
Max Seated Height 1.2 mm —
Number of Terminals 48 —
工作温度范围 [DATA_NEEDED: operating temperature range] —
Write Cycle - Page Program Time [DATA_NEEDED: page program time] —
Density — 32 Mbit (33554 kbits)
存储组织 — 2M x 16
Number of Words — 2000 k
Bits per Word — 16 bits
Access Time — 70 ns
Supply Voltage (VCC) — 2.7 V to 3.6 V
工作温度 — -40C to +125C
封装 — 48-TSOP I
RoHS 状态 — ROHS3 Compliant
Programming Mode — Single VCC program/erase; automatic program/erase with status polling
Power-Up Mode — Read mode (default)

数据手册与资源

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