M29W400FB55N3E vs M29F400FT55N3E2 对比

详细并排对比 M29W400FB55N3E 出自 Micron Technology 和 M29F400FT55N3E2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W400FB55N3E M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E - 4Mb NOR Flash 55ns TSOP-48 | Micron Technology

M29W400FB55N3E ✓ 量产中
Micron Technology
M29F400FT55N3E2 M29F400FT55N3E2 - 4Mbit 5V Parallel NOR Flash, 55ns | Micron

M29F400FT55N3E2 - 4Mbit 5V Parallel NOR Flash, 55ns | Micron

M29F400FT55N3E2 ✓ 量产中

规格对比

参数 M29W400FB55N3E M29F400FT55N3E2
品牌 Micron Technology Micron Technology
分类 EEPROM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $4.15
存储器类型 NOR Flash (parallel) NOR Flash (Parallel)
Density 4 Mbit (4194 kbits) 4 Mbit (512K x 8)
存储组织 512K x 8 bit / 256K x 16 bit —
Access Time 55 ns 55 ns
Supply Voltage (VCC) 2.7 V to 3.6 V —
接口 Parallel, 8-bit/16-bit (BYTE# selectable) Parallel
Block Architecture 19 memory blocks, 1 boot block (bottom, FB) —
Programming Time 10 us per byte/word typical —
Boot Block Hardware Protection Yes —
工作温度 -40C to +125C [DATA_NEEDED: Operating Temperature Range]
封装 48-TSOP I, 12 x 20 mm 44-SO (SOP-44)
Pins 48 —
安装类型 Surface Mount Surface Mount
Packaging Tray —
RoHS 状态 Compliant [DATA_NEEDED: RoHS Status]
Speed Grades in Family 55 ns, 70 ns —
电源电压 — 5 V (single supply)
Boot Block Architecture — Top boot (FT variant)
Programming Supply — No 12 V VPP required (5.0 V programming)
Command Set — JEDEC standard compatible
Program/Erase Endurance — [DATA_NEEDED: Program/Erase Cycles]
Data Retention — [DATA_NEEDED: Data Retention]
Active Read Current — [DATA_NEEDED: Active Current]
Standby Current — [DATA_NEEDED: Standby Current]
Block Protection — Hardware block protection
MSL 等级 — [DATA_NEEDED: Moisture Sensitivity Level]

数据手册与资源

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