M29W800FB70N3E vs M29W400FT55N3E 对比

详细并排对比 M29W800FB70N3E 出自 Micron Technology 和 M29W400FT55N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W800FB70N3E M29W800FB70N3E - 8Mbit 3V Parallel NOR Flash 70ns | Micron

M29W800FB70N3E - 8Mbit 3V Parallel NOR Flash 70ns | Micron

M29W800FB70N3E ✓ 量产中
Micron Technology
M29W400FT55N3E M29W400FT55N3E - 4Mbit NOR Flash 55ns 48-TSOP | Micron

M29W400FT55N3E - 4Mbit NOR Flash 55ns 48-TSOP | Micron

M29W400FT55N3E ✓ 量产中

规格对比

参数 M29W800FB70N3E M29W400FT55N3E
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.95 $2.80
存储器类型 NOR Flash Flash - NOR Memory IC
Density 8 Mbit (8388608 bits) —
存储组织 512K x 16 / 1M x 8 —
数据总线宽度 x8/x16 (BYTE# selectable) —
Access Time 70 ns 55 ns
Supply Voltage (VCC) up to 3.6 V for program, erase and read 2.7 V to 3.6 V (program, erase and read)
Programming Time 10 us per byte/word (typical) —
Memory Blocks 19 blocks, 1 boot block (bottom - FB configuration) —
接口 Parallel Parallel
工作温度 -40C to +125C -40C to +125C
封装 48-TSOP (12 x 20 mm), TSOP I 48-TSOP I
引脚数量 48 —
安装类型 Surface Mount Surface Mount
RoHS 状态 RoHS compliant (plastic TSOP-48) —
Product Longevity Program No —
FBGA Code N/A —
Chipset Validation N/A —
存储容量 — 4 Mbit
Sector Size — 16 KB, 8 KB, 32 KB, 64 KB (asymmetric boot-block)
Boot Block Position — Top (FT suffix)
Temperature Grade — Automotive
Number of Terminals — 48
Package Code / Shape — TSSOP / Rectangular
湿敏等级(MSL) — 3 (168 Hours)
Packaging — Tray
Peak Reflow Time — 30 s max
Companion Access-Time Grade — 55 ns and 70 ns versions available in family

数据手册与资源

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