M29W800FB70N3E vs M29W800FT70N3E 对比

详细并排对比 M29W800FB70N3E 出自 Micron Technology 和 M29W800FT70N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W800FB70N3E M29W800FB70N3E - 8Mbit 3V Parallel NOR Flash 70ns | Micron

M29W800FB70N3E - 8Mbit 3V Parallel NOR Flash 70ns | Micron

M29W800FB70N3E ✓ 量产中
Micron Technology
M29W800FT70N3E M29W800FT70N3E - 8Mbit 70ns Parallel NOR Flash | Micron

M29W800FT70N3E - 8Mbit 70ns Parallel NOR Flash | Micron

M29W800FT70N3E ✓ 量产中

规格对比

参数 M29W800FB70N3E M29W800FT70N3E
品牌 Micron Technology Micron Technology
分类 Memory ICs Flash
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.95 $2.05
存储器类型 NOR Flash NOR Flash (Parallel)
Density 8 Mbit (8388608 bits) 8 Mbit
存储组织 512K x 16 / 1M x 8 1M x 8 / 512K x 16
数据总线宽度 x8/x16 (BYTE# selectable) —
Access Time 70 ns 70 ns
Supply Voltage (VCC) up to 3.6 V for program, erase and read 2.7 V to 3.6 V
Programming Time 10 us per byte/word (typical) —
Memory Blocks 19 blocks, 1 boot block (bottom - FB configuration) —
接口 Parallel Parallel, address/data bus
工作温度 -40C to +125C -40C to +125C
封装 48-TSOP (12 x 20 mm), TSOP I 48-TSOP I (12 x 20 mm, 0.5 mm pitch)
引脚数量 48 —
安装类型 Surface Mount Surface Mount
RoHS 状态 RoHS compliant (plastic TSOP-48) [DATA_NEEDED: RoHS status]
Product Longevity Program No —
FBGA Code N/A —
Chipset Validation N/A —
Programming / Erase Supply — Single supply at VCC (2.7 V to 3.6 V)
Boot Block Location — Top boot block (FT variant)
Bus Width — 8-bit or 16-bit (BYTE pin selectable)
Standby Current — [DATA_NEEDED: standby current]
Program/Erase Endurance — [DATA_NEEDED: program/erase cycles]
Data Retention — [DATA_NEEDED: data retention]
Block Organization — [DATA_NEEDED: block size/organization]

数据手册与资源

浏览全部产品 创建 BOM 获取报价