M29W800FB70N3F vs M29W160FB70N3E 对比

详细并排对比 M29W800FB70N3F 出自 Micron Technology 和 M29W160FB70N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W800FB70N3F M29W800FB70N3F - 8Mb Parallel NOR Flash 70ns TSOP-48 | Micron

M29W800FB70N3F - 8Mb Parallel NOR Flash 70ns TSOP-48 | Micron

M29W800FB70N3F ✓ 量产中
Micron Technology
M29W160FB70N3E M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E ✓ 量产中

规格对比

参数 M29W800FB70N3F M29W160FB70N3E
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.91 $3.58
Density 8 Mbit —
存储组织 512K x 16 / 1M x 8 —
Access Time 70 ns 70 ns
Supply Voltage (VCC) 2.7 V to 3.6 V 3.0 V to 3.6 V
接口类型 Parallel —
存储器类型 NOR Flash (Boot Block) FLASH - NOR
Boot Block Location Bottom —
Block Count 19 memory blocks (1 boot, 3 parameter, 15 main) —
Bus Width Selection x8 / x16 via BYTE# pin —
Programming Time 10 us per byte/word (typical) —
CFI Compliant Yes —
Erase Suspend/Resume Yes —
封装 TSOP-48 (12 x 20 mm) —
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: Operating Temperature Range] [DATA_NEEDED: operating temperature range]
RoHS 状态 Compliant —
Packaging Tape & Reel Tray
存储容量 — 16 Mbit (2M x8 / 1M x16)
接口 — Parallel
Programming Voltage — Single supply (no separate VPP required)
Bus Configuration — x8 / x16 selectable (BYTE# pin)
Architecture — Boot block
封装 / 外壳 — 48-TFSOP (0.724 in, 18.40 mm width)
Program/Erase Endurance — [DATA_NEEDED: program/erase cycles]
Data Retention — [DATA_NEEDED: data retention]
Status Output — Data polling / toggle bit
Block Protection — Yes (boot block protection)

数据手册与资源

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