M29W800FT70ZA3SF vs M29W064FT70N3F 对比
详细并排对比 M29W800FT70ZA3SF 出自 Micron Technology 和 M29W064FT70N3F 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | M29W800FT70ZA3SF | M29W064FT70N3F |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.05 | $6.30 |
| 存储器类型 | NOR Flash | NOR Flash |
| Density | 8 Mbit | 64 Mbit |
| 接口 | Parallel | Parallel |
| Access Time | 70 ns | 70 ns |
| 电源电压 | 2.7 V to 3.6 V | — |
| 工作温度 | -40C to +125C | -40C to +125C |
| 封装 | 48-TFBGA (6 x 8 mm) | 48-TSOP I |
| 安装类型 | Surface Mount | Surface Mount |
| Boot Block Configuration | Top boot block (FT) | Top boot block (FT) |
| Memory Organization | [DATA_NEEDED: memory organization x8/x16] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance cycles] | — |
| Data Retention | [DATA_NEEDED: data retention years] | — |
| Active Read Current | [DATA_NEEDED: active read current] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Package Body Size | 6 x 8 mm | — |
| Ball Pitch | 0.80 mm | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | unknown |
| 存储组织 | — | 8 Mbit x8 / 4 Mbit x16 |
| Supply Voltage (VCC) | — | up to 3.6 V for program, erase, read |
| VPP Fast Program Voltage | — | 12 V (optional) |
| Programming Method | — | Command set / data polling / toggle bit |
| Block Protection | — | Yes, with temporary unprotection |
| Product Longevity Program | — | No |
| Width | — | x8/x16 |