MMG3011NT1 vs MMG3012NT1 对比

详细并排对比 MMG3011NT1 出自 NXP Semiconductors 和 MMG3012NT1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MMG3011NT1 MMG3011NT1 - 0-6 GHz, 15 dB Gain, 15 dBm InGaP HBT GPA | NXP

MMG3011NT1 - 0-6 GHz, 15 dB Gain, 15 dBm InGaP HBT GPA | NXP

MMG3011NT1 ✓ 量产中
NXP Semiconductors
MMG3012NT1 MMG3012NT1 - 6 GHz, 19 dB InGaP HBT GPA RF Amplifier | NXP

MMG3012NT1 - 6 GHz, 19 dB InGaP HBT GPA RF Amplifier | NXP

MMG3012NT1 ✓ 量产中

规格对比

参数 MMG3011NT1 MMG3012NT1
品牌 NXP Semiconductors NXP Semiconductors
分类 RF Amplifiers RF Amplifiers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.88 $2.61
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) —
Technology InGaP HBT (Heterojunction Bipolar Transistor) InGaP HBT (Heterojunction Bipolar Transistor)
功能 General-purpose amplifier (GPA) General Purpose RF Amplifier (GPA), Class A
Frequency Range 0 Hz to 6000 MHz (0-6 GHz) 0 Hz to 6000 MHz (6 GHz)
Small-Signal Gain 15 dB (typical) 19 dB (typical, 900 MHz)
Output Power (P1dB) 15 dBm (typical) —
Operating Class Class A —
Input Matching Internally matched to 50 ohms —
Output Matching Internally matched to 50 ohms —
封装 SOT-89-4 —
安装类型 Surface Mount Surface Mount
Number of Terminals 4 —
Package Body Material Plastic/Epoxy —
Construction Component —
RoHS 状态 [DATA_NEEDED: RoHS status not confirmed in retrieved snippets] Compliant
Lead-Free [DATA_NEEDED: lead-free status not confirmed in retrieved snippets] Yes
Output P1dB — 18.5 dBm (typical)
Output IP3 (OIP3) — [DATA_NEEDED: OIP3 value]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
电源电流 — [DATA_NEEDED: ICC typical]
Input Match — Internally matched to 50 ohms
Output Match — Internally matched to 50 ohms
Operating Case Temperature — -40 °C to +85 °C
Storage Temperature — -65 °C to +150 °C
封装 / 外壳 — SOT-89-4 (TO-243AA), 4-pin surface mount
MSL 等级 — [DATA_NEEDED: MSL rating]
DC Blocking — Required on RF input and output (DC-coupled pins)

数据手册与资源

浏览全部产品 创建 BOM 获取报价