MMG3011NT1 vs MMG3012NT1 비교
다음의 상세 나란히 비교: MMG3011NT1 제조: NXP Semiconductors 및 MMG3012NT1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MMG3011NT1 | MMG3012NT1 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | RF Amplifiers | RF Amplifiers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.88 | $2.61 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Technology | InGaP HBT (Heterojunction Bipolar Transistor) | InGaP HBT (Heterojunction Bipolar Transistor) |
| 기능 | General-purpose amplifier (GPA) | General Purpose RF Amplifier (GPA), Class A |
| Frequency Range | 0 Hz to 6000 MHz (0-6 GHz) | 0 Hz to 6000 MHz (6 GHz) |
| Small-Signal Gain | 15 dB (typical) | 19 dB (typical, 900 MHz) |
| Output Power (P1dB) | 15 dBm (typical) | — |
| Operating Class | Class A | — |
| Input Matching | Internally matched to 50 ohms | — |
| Output Matching | Internally matched to 50 ohms | — |
| 패키지 | SOT-89-4 | — |
| 실장 유형 | Surface Mount | Surface Mount |
| Number of Terminals | 4 | — |
| Package Body Material | Plastic/Epoxy | — |
| Construction | Component | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status not confirmed in retrieved snippets] | Compliant |
| Lead-Free | [DATA_NEEDED: lead-free status not confirmed in retrieved snippets] | Yes |
| Output P1dB | — | 18.5 dBm (typical) |
| Output IP3 (OIP3) | — | [DATA_NEEDED: OIP3 value] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| 공급 전류 | — | [DATA_NEEDED: ICC typical] |
| Input Match | — | Internally matched to 50 ohms |
| Output Match | — | Internally matched to 50 ohms |
| Operating Case Temperature | — | -40 °C to +85 °C |
| Storage Temperature | — | -65 °C to +150 °C |
| 패키지 / 케이스 | — | SOT-89-4 (TO-243AA), 4-pin surface mount |
| MSL 레벨 | — | [DATA_NEEDED: MSL rating] |
| DC Blocking | — | Required on RF input and output (DC-coupled pins) |