MRF5S19060MBR1 vs MRF5S19060NR1 对比
详细并排对比 MRF5S19060MBR1 出自 NXP Semiconductors 和 MRF5S19060NR1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
NXP Semiconductors
MRF5S19060MBR1 - 12W RF Power LDMOS 1990MHz | NXP/Freescale
MRF5S19060MBR1 Obsolete规格对比
| 参数 | MRF5S19060MBR1 | MRF5S19060NR1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | RF Amplifiers | RF Transceivers |
| 生命周期状态 | Obsolete | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $16.40 | $17.95 |
| 晶体管类型 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power Field Effect Transistor | — |
| Frequency Band | 1.93 GHz to 1.99 GHz | — |
| Typical Operating Frequency | 1990 MHz | — |
| Drain-Source Voltage (Rated) | 65 V | 65 V |
| Nominal Drain Operating Voltage | 28 V | — |
| Output Power (Average) | 12 W | 12 W |
| Power Gain | 14 dB | — |
| Test Current (Drain) | 750 mA | — |
| Drain Current Rating (Leakage Spec) | 10 uA | — |
| VSWR Tolerance | 5:1 @ 28 Vdc, 1990 MHz, 12 W avg | — |
| Input Matching | Internally matched | — |
| ESD Protection | Integrated | — |
| 封装 | TO-270 WB-4 (overmolded plastic, also listed as TO-272 WB-4) | — |
| Package Outline | Case 1486-03, Style 1 | — |
| 安装方式 | Flange / surface mount with thermal pad | Surface Mount |
| Maximum Junction Temperature | 200 degree C | — |
| Packaging | Tape and Reel, 500 units per 44 mm 13-inch reel (R1 suffix) | — |
| Target Application | PCN/PCS 1900 MHz, 2 x N-CDMA base station PA final/driver stage | — |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Typical Gain | — | 14 dB at 1.99 GHz |
| Test Supply Voltage | — | 28 V |
| Test Quiescent Current | — | 750 mA |
| 封装 / 外壳 | — | TO-270 WB-4 (over-molded plastic, 4-lead) |
| Configuration | — | Single, Common-Source |
| Application | — | Base station / broadband commercial amplifier |
| 引脚数 | — | 5 |
| RoHS 状态 | — | Compliant |
| Lead Free Status | — | Lead Free |
| Operating Mode | — | Class AB (typical RF PA) |