MRF5S19060NR1 vs MRF5S19060MR1 对比

详细并排对比 MRF5S19060NR1 出自 NXP Semiconductors 和 MRF5S19060MR1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF5S19060NR1 MRF5S19060NR1 - 1930-1990 MHz 12W RF Power LDMOS | NXP

MRF5S19060NR1 - 1930-1990 MHz 12W RF Power LDMOS | NXP

MRF5S19060NR1 ✓ 量产中
NXP Semiconductors
MRF5S19060MR1 MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP

MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP

MRF5S19060MR1 ✓ 量产中

规格对比

参数 MRF5S19060NR1 MRF5S19060MR1
品牌 NXP Semiconductors NXP Semiconductors
分类 RF Transceivers MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $17.95 $25.60
晶体管类型 LDMOS, N-Channel Enhancement-Mode Lateral MOSFET N-Channel LDMOS RF Power MOSFET
Frequency Range 1930 MHz to 1990 MHz 1930 MHz to 1990 MHz
Output Power (Average) 12 W —
Typical Gain 14 dB at 1.99 GHz —
Drain-Source Voltage (Rated) 65 V —
Test Supply Voltage 28 V —
Test Quiescent Current 750 mA —
封装 / 外壳 TO-270 WB-4 (over-molded plastic, 4-lead) —
安装方式 Surface Mount —
Configuration Single, Common-Source —
Application Base station / broadband commercial amplifier —
引脚数 5 —
RoHS 状态 Compliant [DATA_NEEDED: RoHS status]
Lead Free Status Lead Free —
Operating Mode Class AB (typical RF PA) —
Manufacturer — NXP (formerly Freescale Semiconductor)
Part Number — MRF5S19060MR1
Drain-Source Voltage (Vdss) — 65 V (max)
Drain Current (Id) — 750 mA
Output Power (Pout, avg) — 12 W (N-CDMA)
Output Power (Pout, PEP) — 60 W (typical)
Power Gain (Gps) — 14 dB (typical)
Drain Efficiency (etaD) — 45% (typical)
Operating Voltage — 28 V
封装 — TO-270 WB-4 (Ceramic)
安装类型 — Surface Mount / Flange Mount
Test Signal — 2 x N-CDMA
MSL 等级 — [DATA_NEEDED: MSL rating]
Operating Class — Class AB

数据手册与资源

浏览全部产品 创建 BOM 获取报价