MRF5S19060NR1 vs MRF5S19060MR1 비교

다음의 상세 나란히 비교: MRF5S19060NR1 제조: NXP Semiconductors 및 MRF5S19060MR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MRF5S19060NR1 MRF5S19060NR1 - 1930-1990 MHz 12W RF Power LDMOS | NXP

MRF5S19060NR1 - 1930-1990 MHz 12W RF Power LDMOS | NXP

MRF5S19060NR1 ✓ 활성
NXP Semiconductors
MRF5S19060MR1 MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP

MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP

MRF5S19060MR1 ✓ 활성

사양 비교

파라미터 MRF5S19060NR1 MRF5S19060MR1
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 RF Transceivers MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $17.95 $25.60
트랜지스터 유형 LDMOS, N-Channel Enhancement-Mode Lateral MOSFET N-Channel LDMOS RF Power MOSFET
Frequency Range 1930 MHz to 1990 MHz 1930 MHz to 1990 MHz
Output Power (Average) 12 W —
Typical Gain 14 dB at 1.99 GHz —
Drain-Source Voltage (Rated) 65 V —
Test Supply Voltage 28 V —
Test Quiescent Current 750 mA —
패키지 / 케이스 TO-270 WB-4 (over-molded plastic, 4-lead) —
장착 스타일 Surface Mount —
Configuration Single, Common-Source —
Application Base station / broadband commercial amplifier —
핀 수 5 —
RoHS 상태 Compliant [DATA_NEEDED: RoHS status]
Lead Free Status Lead Free —
Operating Mode Class AB (typical RF PA) —
Manufacturer — NXP (formerly Freescale Semiconductor)
Part Number — MRF5S19060MR1
Drain-Source Voltage (Vdss) — 65 V (max)
Drain Current (Id) — 750 mA
Output Power (Pout, avg) — 12 W (N-CDMA)
Output Power (Pout, PEP) — 60 W (typical)
Power Gain (Gps) — 14 dB (typical)
Drain Efficiency (etaD) — 45% (typical)
Operating Voltage — 28 V
패키지 — TO-270 WB-4 (Ceramic)
실장 유형 — Surface Mount / Flange Mount
Test Signal — 2 x N-CDMA
MSL 레벨 — [DATA_NEEDED: MSL rating]
Operating Class — Class AB

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