MRF5S19100HR5 vs MRF7S19100NR1 对比
详细并排对比 MRF5S19100HR5 出自 NXP Semiconductors 和 MRF7S19100NR1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
NXP Semiconductors
MRF7S19100NR1 - 29W 1930-1990MHz RF Power LDMOS | NXP Semiconductors
MRF7S19100NR1 ✓ 量产中规格对比
| 参数 | MRF5S19100HR5 | MRF7S19100NR1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | Obsolete | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $25.40 | $24.60 |
| 晶体管类型 | LDMOS (RF Power) | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | N-Channel MOSFET | — |
| Frequency Band | 1.93 GHz to 1.99 GHz | — |
| Output Power (Pout) | 22 W | — |
| Power Gain at Test | 13.9 dB | — |
| Drain-Source Voltage Rated (Vdss) | 65 V | — |
| Test Voltage (Vd) | 28 V | — |
| Test Current (Id) | 1 A | — |
| 封装 / 外壳 | NI-780 (3-pin ceramic flange) | — |
| Supplier Device Package | NI-780 | — |
| 安装类型 | Chassis Mount / Flange | Surface Mount |
| Configuration | Single N-Channel | Single, Common Source |
| Part Status | Obsolete | — |
| RoHS 状态 | [DATA_NEEDED: rohs status] | [DATA_NEEDED: RoHS compliance per NXP product page] |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| ESD Protection | Yes (per datasheet) | — |
| Channel Temperature (Tj max) | [DATA_NEEDED: junction temp absolute maximum] | — |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Drain-Source Voltage (V(BR)DSS) min | — | 65 V |
| Drain Supply Voltage (VDD) typical | — | 28 V |
| Output Power (Pout) Avg W-CDMA | — | 29 W |
| Power Gain | — | 17.5 dB |
| Drain Current at Test (ID) | — | 1 A |
| Quiescent Current (IDQ) typical | — | 1000 mA to 1400 mA |
| Test Voltage | — | 28 V |
| 封装 | — | TO-270 WB-4 (Case 1486-03) Plastic |
| Operating Mode | — | Class AB / Class C |
| Modulation Target | — | Single-Carrier W-CDMA (3GPP TM1 64 DPCH) |
| MSL 等级 | — | [DATA_NEEDED: MSL level per JEDEC J-STD-020] |