MRF5S19100HR5 vs MRF7S19100NR1 비교
다음의 상세 나란히 비교: MRF5S19100HR5 제조: NXP Semiconductors 및 MRF7S19100NR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MRF7S19100NR1 - 29W 1930-1990MHz RF Power LDMOS | NXP Semiconductors
MRF7S19100NR1 ✓ 활성사양 비교
| 파라미터 | MRF5S19100HR5 | MRF7S19100NR1 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | Obsolete | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $25.40 | $24.60 |
| 트랜지스터 유형 | LDMOS (RF Power) | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | N-Channel MOSFET | — |
| Frequency Band | 1.93 GHz to 1.99 GHz | — |
| Output Power (Pout) | 22 W | — |
| Power Gain at Test | 13.9 dB | — |
| Drain-Source Voltage Rated (Vdss) | 65 V | — |
| Test Voltage (Vd) | 28 V | — |
| Test Current (Id) | 1 A | — |
| 패키지 / 케이스 | NI-780 (3-pin ceramic flange) | — |
| Supplier Device Package | NI-780 | — |
| 실장 유형 | Chassis Mount / Flange | Surface Mount |
| Configuration | Single N-Channel | Single, Common Source |
| Part Status | Obsolete | — |
| RoHS 상태 | [DATA_NEEDED: rohs status] | [DATA_NEEDED: RoHS compliance per NXP product page] |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| ESD Protection | Yes (per datasheet) | — |
| Channel Temperature (Tj max) | [DATA_NEEDED: junction temp absolute maximum] | — |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Drain-Source Voltage (V(BR)DSS) min | — | 65 V |
| Drain Supply Voltage (VDD) typical | — | 28 V |
| Output Power (Pout) Avg W-CDMA | — | 29 W |
| Power Gain | — | 17.5 dB |
| Drain Current at Test (ID) | — | 1 A |
| Quiescent Current (IDQ) typical | — | 1000 mA to 1400 mA |
| Test Voltage | — | 28 V |
| 패키지 | — | TO-270 WB-4 (Case 1486-03) Plastic |
| Operating Mode | — | Class AB / Class C |
| Modulation Target | — | Single-Carrier W-CDMA (3GPP TM1 64 DPCH) |
| MSL 레벨 | — | [DATA_NEEDED: MSL level per JEDEC J-STD-020] |