MRF6S19140HR5 vs MRF6S18140HR5 对比
详细并排对比 MRF6S19140HR5 出自 NXP Semiconductors 和 MRF6S18140HR5 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
NXP Semiconductors
MRF6S18140HR5 - 29W RF Power LDMOS Transistor | NXP Semiconductors
MRF6S18140HR5 ✓ 量产中规格对比
| 参数 | MRF6S19140HR5 | MRF6S18140HR5 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $82.40 | $65.00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP USA Inc. (formerly Freescale Semiconductor) |
| 晶体管类型 | N-Channel RF Power LDMOS | LDMOS (RF Power MOSFET) |
| Drain-Source Voltage (Vdss) | 68 V (max) | — |
| Operating Drain Voltage (typical) | 28 V | — |
| Pulsed Drain Current (Id) | 1.15 A | — |
| Output Power (Pout) | 29 W (CW or pulsed) | — |
| Operating Frequency | 1.93 GHz to 1.99 GHz | — |
| Small-Signal Gain | 16 dB (typical) | — |
| 封装 / 外壳 | NI-880H-2L ceramic flange | — |
| 安装类型 | Chassis / flange mount (bolt-down) | Chassis / Flange Mount |
| Process Technology | HV6 LDMOS | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | — |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| 工作温度范围 | [DATA_NEEDED: operating temp range] | — |
| Channel-to-Flange Thermal Resistance | 0.45 C/W (estimated, datasheet figure) | — |
| Technology | — | LDMOS, N-Channel |
| Frequency | — | 1.88 GHz (test frequency) |
| Test Voltage | — | 28 V |
| Test Current | — | 1.2 A |
| Power Gain | — | 16 dB (typical at test condition) |
| Output Power (P1dB) | — | 29 W |
| Voltage - Rated (Vdss max) | — | 68 V |
| Current Rating (leakage) | — | 10 uA |
| 封装 | — | NI-880H-2L (ceramic flange mount) |
| Configuration | — | Single, internally input-matched |
| Application | — | N-CDMA, TDMA, CDMA, multicarrier amplifier base-station PA |
| Operating Class | — | Class AB |
| Lead Free Status | — | Lead Free / RoHS Compliant (per distributor listing) |