MRF6S19140HR5 vs MRF6S19140HSR5 对比

详细并排对比 MRF6S19140HR5 出自 NXP Semiconductors 和 MRF6S19140HSR5 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF6S19140HR5 MRF6S19140HR5 - 29W RF Power LDMOS, 1.93-1.99GHz | NXP

MRF6S19140HR5 - 29W RF Power LDMOS, 1.93-1.99GHz | NXP

MRF6S19140HR5 ✓ 量产中
NXP Semiconductors
MRF6S19140HSR5 MRF6S19140HSR5 - 29W RF Power LDMOS Transistor 1.93-1.99GHz | NXP

MRF6S19140HSR5 - 29W RF Power LDMOS Transistor 1.93-1.99GHz | NXP

MRF6S19140HSR5 ✓ 量产中

规格对比

参数 MRF6S19140HR5 MRF6S19140HSR5
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $82.40 $25.40
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors
晶体管类型 N-Channel RF Power LDMOS RF Power LDMOS (N-Channel)
Drain-Source Voltage (Vdss) 68 V (max) 68 V
Operating Drain Voltage (typical) 28 V 28 V
Pulsed Drain Current (Id) 1.15 A —
Output Power (Pout) 29 W (CW or pulsed) 29 W
Operating Frequency 1.93 GHz to 1.99 GHz —
Small-Signal Gain 16 dB (typical) —
封装 / 外壳 NI-880H-2L ceramic flange NI-880S
安装类型 Chassis / flange mount (bolt-down) Chassis Mount / Screw Clamp
Process Technology HV6 LDMOS —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Lead-Free [DATA_NEEDED: lead-free status] —
工作温度范围 [DATA_NEEDED: operating temp range] —
Channel-to-Flange Thermal Resistance 0.45 C/W (estimated, datasheet figure) —
Original Manufacturer — Freescale Semiconductor
Part Status — Active
Drain Current (Id) — 1.15 A
Frequency Range — 1.93 GHz to 1.99 GHz
Power Gain (Gps) — 16 dB
Test Condition — Two-tone W-CDMA, 1.96 GHz
工作温度 — -40 C to +150 C (junction)
ESD Protection — Yes (integrated)
Technology — HV6 LDMOS (later branded NXP HV6)

数据手册与资源

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