MRF6S21060NBR1 vs MRF6S21060BR1 对比
详细并排对比 MRF6S21060NBR1 出自 NXP Semiconductors 和 MRF6S21060BR1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
NXP Semiconductors
MRF6S21060BR1 - 14W RF Power LDMOS Transistor 2.12GHz | NXP
MRF6S21060BR1 Obsolete规格对比
| 参数 | MRF6S21060NBR1 | MRF6S21060BR1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $21.40 | $6.80 |
| 晶体管类型 | LDMOS, N-Channel Enhancement-Mode | N-Channel Enhancement-Mode LDMOS |
| Technology | RF Power Field Effect Transistor | — |
| Drain-Source Voltage (Rated) | 68 V | — |
| Operating Frequency Range | 2110 MHz to 2170 MHz | — |
| Test Frequency | 2.12 GHz | — |
| Test Drain Voltage (VDD) | 28 V | — |
| Test Quiescent Current (IDQ) | 1600 mA | — |
| Power Gain | 15.5 dB | 15.5 dB at 2.12 GHz |
| Output Power (Avg, Single-Carrier W-CDMA) | 14 W | — |
| Power Added Efficiency | [DATA_NEEDED: PAE %] | — |
| Operating Mode | Class AB | Class AB |
| 封装 | TO-272 WB-4 (ceramic flanged) | — |
| 安装类型 | Surface Mount / Flange Mount | Surface Mount / Flange Mount |
| RoHS 状态 | compliant | — |
| Lead Free | yes | — |
| Target Application | W-CDMA base station final stage | W-CDMA base station final-stage PA |
| Drain-Source Voltage (Vdss) | — | 68 V |
| Test Voltage | — | 28 V |
| Test Current | — | 610 mA |
| Output Power (Pout) | — | 14 W |
| Frequency Range | — | Up to 2170 MHz |
| 封装 / 外壳 | — | TO-272 WB-4 (ceramic) |
| Lead Free Status | — | Lead Free |
| Suitable For | — | TDMA, CDMA, multicarrier amplifier applications |
| Current Rating (Datasheet) | — | 10 uA |
| Manufacturer | — | NXP (formerly Freescale Semiconductor) |