MRF6S21060NBR1 vs MRF6S21060BR1 비교
다음의 상세 나란히 비교: MRF6S21060NBR1 제조: NXP Semiconductors 및 MRF6S21060BR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MRF6S21060BR1 - 14W RF Power LDMOS Transistor 2.12GHz | NXP
MRF6S21060BR1 Obsolete사양 비교
| 파라미터 | MRF6S21060NBR1 | MRF6S21060BR1 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | Obsolete |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $21.40 | $6.80 |
| 트랜지스터 유형 | LDMOS, N-Channel Enhancement-Mode | N-Channel Enhancement-Mode LDMOS |
| Technology | RF Power Field Effect Transistor | — |
| Drain-Source Voltage (Rated) | 68 V | — |
| Operating Frequency Range | 2110 MHz to 2170 MHz | — |
| Test Frequency | 2.12 GHz | — |
| Test Drain Voltage (VDD) | 28 V | — |
| Test Quiescent Current (IDQ) | 1600 mA | — |
| Power Gain | 15.5 dB | 15.5 dB at 2.12 GHz |
| Output Power (Avg, Single-Carrier W-CDMA) | 14 W | — |
| Power Added Efficiency | [DATA_NEEDED: PAE %] | — |
| Operating Mode | Class AB | Class AB |
| 패키지 | TO-272 WB-4 (ceramic flanged) | — |
| 실장 유형 | Surface Mount / Flange Mount | Surface Mount / Flange Mount |
| RoHS 상태 | compliant | — |
| Lead Free | yes | — |
| Target Application | W-CDMA base station final stage | W-CDMA base station final-stage PA |
| Drain-Source Voltage (Vdss) | — | 68 V |
| Test Voltage | — | 28 V |
| Test Current | — | 610 mA |
| Output Power (Pout) | — | 14 W |
| Frequency Range | — | Up to 2170 MHz |
| 패키지 / 케이스 | — | TO-272 WB-4 (ceramic) |
| Lead Free Status | — | Lead Free |
| Suitable For | — | TDMA, CDMA, multicarrier amplifier applications |
| Current Rating (Datasheet) | — | 10 uA |
| Manufacturer | — | NXP (formerly Freescale Semiconductor) |