MRF6S27085HR5 vs MRF6S19140HR3 对比

详细并排对比 MRF6S27085HR5 出自 NXP Semiconductors 和 MRF6S19140HR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF6S27085HR5 MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP

MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP

MRF6S27085HR5 ✓ 量产中

规格对比

参数 MRF6S27085HR5 MRF6S19140HR3
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs RF MOSFETs
生命周期状态 有效 Obsolete
库存状态 有库存 有库存
单价(USD) $21.85 $25.20
晶体管类型 LDMOS, N-Channel RF Power LDMOS N-Channel Enhancement-Mode Lateral MOSFET
Technology HV6 LDMOS —
Rated Drain-Source Voltage (Vdss) 68 V —
Test Supply Voltage (Vdd) 28 V —
Test Quiescent Current (Idq) 900 mA —
Operating Frequency Range 2500 MHz to 2700 MHz —
Test Frequency 2660 MHz —
Output Power (Pout) 20 W (CW) —
Small-Signal Gain 15.5 dB at 2.66 GHz —
封装 / 外壳 NI-780H-2L (ceramic acorn) NI-880H-2L (CASE 465B-03, STYLE 1), ceramic with flange
安装类型 Chassis / Flange Mount Chassis / Stud-Mount (ceramic flange, bolt-down thermal)
引脚数量 2-lead + flange 3
Lead Free Status Lead-free (per distributor listing) —
Peak Reflow Temperature 260 C —
Time at Peak Reflow 40 s maximum —
RoHS 状态 Compliant (per distributor listing) [DATA_NEEDED: RoHS compliance status]
Application W-CDMA / multi-carrier base-station PA —
Frequency Range — 1.93 GHz to 1.99 GHz (1930-1990 MHz)
Drain-Source Voltage (Max Rated) — 68 V
Test Drain Voltage (Vdd) — 28 V
Test Drain Current — 1.15 A
Power Output (Pout, Avg) — 29 W
Power Gain — 16 dB (typ)
效率 — [DATA_NEEDED: drain efficiency %]
Application Class — Class AB, PCN/PCS base-station, TDMA/CDMA, multi-carrier
Operating Mode — CW / pulsed RF amplifier
Original Manufacturer — Freescale Semiconductor (now NXP)
Lead / Termination Finish — Gold-plated (per datasheet case drawing)
MSL — [DATA_NEEDED: MSL rating]
HSL/R3 Suffix — R3 = 13" tape and reel
Datasheet Document — MRF6S19140H.pdf (NXP/Freescale)
Datasheet Length — 12 pages (per third-party datasheet index)

数据手册与资源

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