MRF6S19140HR3 - 29W LDMOS RF MOSFET 1.93-1.99GHz | NXP Semiconductors
料号： MRF6S19140HR3 ✗ 停产| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $38.5 | $38.50 |
| 10 | $34.65 | $346.50 |
| 100 | $30.8 | $3,080.00 |
| 500 | $27.5 | $13,750.00 |
| 1,000 | $25.2 | $25,200.00 |
MRF6S19140HR3 概述
An RF power LDMOS transistor is a lateral double-diffused MOSFET optimized for high-frequency, high-power amplification. It belongs to the power MOSFET family within RF & wireless discretes, sitting below LDMOS but above general-purpose switching MOSFETs in the taxonomy. LDMOS parts dominate cellular base-station PAs (power amplifiers) because they combine high RF gain, high breakdown voltage and excellent thermal conductivity from the silicon die to the ceramic flanged package.
Key features include a tested gain of 16dB at 1.93-1.99GHz, integrated ESD protection, inherent ruggedness for high VSWR loads, and gold-plated leads for long-term reliability in outdoor cabinet environments. The rated pulsed output capability (29W average) is delivered from a 28V rail, simplifying bias generation. The NI-880H-2L package provides a stud-mount ceramic body with bolt-down thermal path, achieving low thermal resistance to an external heatsink for continuous CW operation at full rated power.
Architecturally, the device uses NXP's high-voltage sixth-generation (HV6) LDMOS process, which optimizes the drain-source drift region to maximize RF efficiency at cellular bands. The lateral geometry minimizes parasitic capacitances, supporting the 1.93-1.99GHz target band while keeping the die area small enough to fit the NI-880 ceramic housing. Internally matched input and partially matched output networks reduce external BOM count in the final amplifier stage.
Typical applications include PCS/PCN base-station power amplifiers, micro-cell and picocell infrastructure, WLL (Wireless Local Loop) front-ends, and multi-carrier drivers. The 28V bias and 29W output power make it well-suited for the final stage of high-linearity Class-AB macrocell transmitters targeting the 1.9GHz US PCS band.
When designing with this part, ensure the source leads are solidly grounded with multiple vias to the thermal PCB. A high-Q output matching network is required at the application board level because output impedance depends on load-pull characterization for the user's exact frequency and bias point.
This page synthesizes distributor pricing for NI-880H-2L LDMOS PAs, drop-in ceramic-package alternatives, and engineering notes not consolidated on any single manufacturer page.
直接替换替代料： MRF6S19140HR3 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MRF6S19140HR3 （相同外形与封装尺寸） ——差异在于 Mounting Type, Package / Case, Transistor Type.
快速对比工具——选择替代料号进行并排对比：
MRF6S19140HSR3
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MRF6S21140HR3
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MRF6S19140HR3 最大额定值与电气特性
| 晶体管类型 | LDMOS N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | 1.93 GHz to 1.99 GHz (1930-1990 MHz) |
| Drain-Source Voltage (Max Rated) | 68 V |
| Test Drain Voltage (Vdd) | 28 V |
| Test Drain Current | 1.15 A |
| Power Output (Pout, Avg) | 29 W |
| Power Gain | 16 dB (typ) |
| 封装 / 外壳 | NI-880H-2L (CASE 465B-03, STYLE 1), ceramic with flange |
| 引脚数量 | 3 |
| 安装类型 | Chassis / Stud-Mount (ceramic flange, bolt-down thermal) |
| Application Class | Class AB, PCN/PCS base-station, TDMA/CDMA, multi-carrier |
| Operating Mode | CW / pulsed RF amplifier |
| Original Manufacturer | Freescale Semiconductor (now NXP) |
| Lead / Termination Finish | Gold-plated (per datasheet case drawing) |
| HSL/R3 Suffix | R3 = 13" tape and reel |
| Datasheet Document | MRF6S19140H.pdf (NXP/Freescale) |
| Datasheet Length | 12 pages (per third-party datasheet index) |
MRF6S19140HR3 引脚配置
| 引脚 1 | Gate — RF input gate; DC bias feed |
| 引脚 2 | Drain — RF output drain; DC 28V bias feed |
| 引脚 3 | Source — Source (internally connected to flange ground) |
MRF6S19140HR3 DC 安全工作区
典型应用
MRF6S19140HR3 适用于 6 应用s: PCS Base-Station Final Stage PA, PCN Cellular Macrocell PA, WLL / Fixed Wireless Access Front-End, Multi-Carrier Class-AB PA Module, Doherty PA Final Stage, Industrial RF Heating / Driver.
PCS Base-Station Final Stage PA
The MRF6S19140HR3 is a direct-fit final-stage LDMOS for 1930-1990 MHz PCS base-station power amplifiers, delivering the tested 29W average output at 28V drain bias on 2xN-CDMA drive signals. Its 16dB gain at 1.93-1.99GHz lets a single PA stage reach full output with modest upstream drive from the BTS driver, simplifying BOM and reducing connector losses in the rack. The NI-880H-2L chassis-mount package bolts to a machined heatsink for continuous CW operation in outdoor 24/7 telecom cabinets, where reliability and creep into adjacent-channel masks depend on careful gain and phase linearity at high back-off. Pair it with a pre-driver LDMOS and a circulator/directional coupler feedback chain to meet the strict 3GPP spectral mask. Avoid using this part below 1.9GHz or above 2GHz — the input match is optimized for the PCS band and out-of-band gain rolls off sharply.
推荐
PCN Cellular Macrocell PA
In PCN (Personal Communications Network) macrocell transmitters covering 1930-1990 MHz, the MRF6S19140HR3 functions as the high-power final PA after upstream gain blocks. Its 28V bias matches standard -48V-fed telecom power-conversion rails via a compact 28V intermediate bus, eliminating the need for custom bias supplies. The part's inherent LDMOS ruggedness survives a 10:1 output VSWR transient at full rated power, critical for PA protection logic in field-deployed radios where antenna connections may be intermittent. The 16dB gain trades off against smaller PCB footprint requirements and reduces total gain-stage count compared with a 12dB part. Designers should target the datasheet's load-pull data at the exact PCB implementation to optimize intermodulation products for high-linearity 3GPP carriers.
推荐
WLL / Fixed Wireless Access Front-End
For wireless local loop (WLL) and FWA (Fixed Wireless Access) CPE radios operating in the 1930-1990 MHz PCS band, the MRF6S19140HR3 delivers 29W of output in a through-hole ceramic flange that bolts directly to the outdoor enclosure's chassis. Compared to surface-mount RF power parts, the NI-880H-2L ceramic housing gives superior thermal dissipation for continuous outdoor duty at full power, and the rugged LDMOS die tolerates antenna corrosion and impedance mismatch from weather aging. The 16dB gain lets a single stage drive the antenna network from a small IF/RF chain. Use the part in outdoor WLL CPE where mains-powered operation gives the thermal headroom to dissipate up to 65W of DC input at full RF output.
推荐
Multi-Carrier Class-AB PA Module
In multi-carrier amplifier (MCA) modules combining multiple 2xN-CDMA carriers into one PA stage, the MRF6S19140HR3 is designed specifically for the high-linearity Class-AB operation such modules require. Its 29W CW rating can envelope 40W peak multi-carrier bursts while maintaining adjacent-channel leakage ratio (ACLR) inside 3GPP mask limits. The ceramic NI-880H-2L package eases thermal redistribution when the amplifier is driven unevenly across carriers, and the LDMOS die's negative temperature coefficient stabilizes gain across operating temperature. Add a passive isolator/circulator on the output to protect the device from load-pull mismatches seen in the multi-carrier combiner.
推荐
Doherty PA Final Stage
The MRF6S19140HR3 functions as the carrier or peaking amplifier final-stage LDMOS in symmetric Doherty PA architectures for 1930-1990 MHz PCS transmitters. Its 29W average and 16dB gain allow the peaking amplifier to handle 6-9dB back-off peaks while the carrier handles average; the LDMOS die's soft compression characteristic improves Doherty linearity without DPD. Match both halves of the Doherty pair to 50Ω at the quarter-wave transformer; the part's source-down ceramic flange gives the lowest common-source inductance critical for Doherty stability. Ensure the load impedance seen at saturation matches the datasheet's load-pull contour for maximum efficiency.
推荐
Industrial RF Heating / Driver
Beyond cellular telecom, the MRF6S19140HR3's 1930-1990 MHz / 29W capability makes it usable as a driver or final stage in industrial RF heating, plasma generation, or scientific accelerator RF chains operating in the 2GHz vicinity. The chassis-mount NI-880H-2L ceramic package handles continuous CW duty at full output, and the LDMOS die's tolerance of extreme load VSWR far exceeds traditional bipolar power transistors in plasma applications. The 28V bias is convenient for industrial 24-30V process power rails. Use harmonic filters after the device output in industrial applications to comply with FCC/ETSI out-of-band emissions regulations.
推荐
推荐产品汇总
工程参考数据： MRF6S19140HR3 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MRF6S19140HSR3 | MRF6S21140HR3 |
|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-880H-2L (CASE 465B-03) | NI-880H-2L (CASE 465B-03) - same | NI-880H-2L (CASE 465B-03) - same |
| Frequency Range | 1930-1990 MHz | 1930-1990 MHz (identical) | 2110-2170 MHz (AWS/UMTS band shift) |
| Drain Voltage (Test) | 28 V | 28 V | 28 V |
| Output Power (Avg) | 29 W | 29 W | 29 W |
| Power Gain | 16 dB | 16 dB | 16 dB |
| Drain-Source Max Voltage | 68 V | 68 V | 68 V |
| Lifecycle Status | Obsolete | Obsolete (same product family) | Obsolete to last-time-buy depending on distributor |
关键差异点
- Only variant in the family with high-volume R3 tape-and-reel packaging （对比 MRF6S19140HSR3)
- Lower band (PCS 1930-1990 MHz) instead of AWS (2110-2170 MHz) （对比 MRF6S21140HR3)
- 29W/16dB gain balanced for Class-AB with multi-carrier capability （对比 MRF6S19060HR3 (12W driver))
设计说明
Estimated: at 28V bias and 29W RF output with ~33% drain efficiency, the part dissipates roughly 60W DC input minus 29W RF output = ~31W of waste heat. The NI-880H-2L chassis-mount ceramic package should be bolted to a heatsink with thermal compound to keep junction temperature below the 200°C absolute maximum; use a machined flatness ≤0.05mm and torque to the case drawing spec. Add a thermal cutout or PTC thermistor in production to detect heatsink loss-of-contact. Field-deployed base-station PAs usually add a fan or convection chimney over the heatsink to ensure continuous CW operation in outdoor cabinets.
Solder the ceramic NI-880H-2L leads directly to the PCB ground and bias pads (or to a leaded PCB in some legacy designs). Keep the source (flange) bond to PCB ground as short and wide as possible — any source lead inductance feeds back into the gate, creating oscillation. Use a minimum 4-via array per source lead into the PCB ground plane. Place bypass capacitors (≥1μF) at the drain bias feed within 2mm of the lead, and a 10nF broadband RF chip capacitor at the same node. Add a harmonic trap (LC network) at the drain output to suppress 2nd and 3rd harmonic content per FCC/ETSI mask requirements.
Do NOT bias the gate above 0V at quiescent — the LDMOS gate is a depletion-mode device at zero gate voltage for some production lots, and you must sequence the gate bias BEFORE applying 28V to the drain. Always use a sequence controller (e.g., NXP MC33151 or discrete equivalent). Also do not assume the part is pin-compatible with TO-220 LD-MOSFETs — the NI-880H-2L has only three leads (Gate, Drain, Source) and a flange ground, and any TO-220 PCB layout will be incorrect. Last: read the datasheet's load-pull data at your exact operating bias and frequency before finalizing output-matching components.
Avoid designing in this obsolete part on new layouts. Several NXP and competitors' current-generation LDMOS parts cover the 1930-1990 MHz band with higher gain, better ruggedness and active product lifecycle. If designing a new base-station PA in 2026, qualify the recommended replacement family from the same MRF6S19140H datasheet document before committing to this obsolete HR3 variant.
合规信息
Compliance status not stated in retrieved datasheet indexes. The original Freescale datasheet predates full RoHS documentation. Request a current NXP compliance declaration if needed for new designs.
