MRF6S27085HR5 vs MRF6S27085HR3 对比

详细并排对比 MRF6S27085HR5 出自 NXP Semiconductors 和 MRF6S27085HR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF6S27085HR5 MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP

MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP

MRF6S27085HR5 ✓ 量产中
NXP Semiconductors
MRF6S27085HR3 MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 ✓ 量产中

规格对比

参数 MRF6S27085HR5 MRF6S27085HR3
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $21.85 $23.75
晶体管类型 LDMOS, N-Channel RF Power LDMOS, N-Channel, Enhancement-Mode, Lateral
Technology HV6 LDMOS Lateral DMOS (LDMOS)
Rated Drain-Source Voltage (Vdss) 68 V —
Test Supply Voltage (Vdd) 28 V —
Test Quiescent Current (Idq) 900 mA —
Operating Frequency Range 2500 MHz to 2700 MHz —
Test Frequency 2660 MHz 2.66 GHz
Output Power (Pout) 20 W (CW) —
Small-Signal Gain 15.5 dB at 2.66 GHz —
封装 / 外壳 NI-780H-2L (ceramic acorn) NI-780H-2L (CASE 465-06, STYLE 1), ceramic flange mount
安装类型 Chassis / Flange Mount Flange / Chassis mount with bolt-down thermal pad
引脚数量 2-lead + flange 3 (Drain, Gate, Source)
Lead Free Status Lead-free (per distributor listing) —
Peak Reflow Temperature 260 C —
Time at Peak Reflow 40 s maximum —
RoHS 状态 Compliant (per distributor listing) Compliant per Freescale/NXP material declaration
Application W-CDMA / multi-carrier base-station PA RF Power Amplifier
Manufacturer — NXP Semiconductors (formerly Freescale)
Part Number — MRF6S27085HR3
Operating Frequency — 2600 MHz to 2700 MHz
Output Power (Average, P1dB-rated) — 20 W
Power Gain (Typ) — 15.5 dB
Drain-Source Voltage Rating — 68 V
Operating Drain Voltage — 28 V
Quiescent Bias Current (Test) — 900 mA
Packaging — Tape & Reel (suffix HR3)

数据手册与资源

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