MRF6V14300HSR5 vs MRF6V14300HR5 对比

详细并排对比 MRF6V14300HSR5 出自 NXP Semiconductors 和 MRF6V14300HR5 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF6V14300HSR5 MRF6V14300HSR5 - 330W LDMOS RF Power MOSFET, 1.4GHz, 50V | NXP

MRF6V14300HSR5 - 330W LDMOS RF Power MOSFET, 1.4GHz, 50V | NXP

MRF6V14300HSR5 ✓ 量产中
NXP Semiconductors
MRF6V14300HR5 MRF6V14300HR5 - 330W, 1.4GHz RF Power LDMOS MOSFET | NXP

MRF6V14300HR5 - 330W, 1.4GHz RF Power LDMOS MOSFET | NXP

MRF6V14300HR5 ✓ 量产中

规格对比

参数 MRF6V14300HSR5 MRF6V14300HR5
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $162.00 $184.20
晶体管类型 LDMOS, N-Channel, RF Power N-Channel Lateral RF Power MOSFET (LDMOS-family)
Technology Lateral N-Channel MOSFET (LDMOS) —
Family VHV6 (Very High Voltage, 6th generation) —
Drain-Source Voltage (Vds) Rated 100 V —
Operating Drain Voltage (Test) 50 V —
Operating Frequency Range 1200 MHz to 1400 MHz —
Typical Test Frequency 1.4 GHz —
Peak Output Power 330 W (pulsed) —
Typical Power Gain 18 dB at 1.4 GHz —
Quiescent Current (Idq) 150 mA —
Duty Cycle 1% to 12% (pulsed) 1% to 12%
封装 NI-780S (SOT1793), 3-pin ceramic —
安装类型 Surface Mount / Flange Mount Chassis / screw-mount (NI-780H ceramic flange)
Lead Free Status Lead Free (per NXP product page) —
RoHS 状态 Compliant [DATA_NEEDED: RoHS status]
Manufacturer — NXP Semiconductors (formerly Freescale)
封装 / 外壳 — NI-780H-2L (push-pull ceramic flange)
Drain-Source Voltage (Vdss) — 50 V
Drain Current (Id) — 150 mA (typical pulsed bias)
Operating Frequency — 1.4 GHz (characterized 1200-1400 MHz)
Output Power (Pout) — 330 W pulsed
Power Gain (Gps) — 18 dB typical
Configuration — Single, push-pull
Channel Type — N-Channel enhancement mode
Number of Elements — 1
Peak Reflow Temperature — 260 C (max 40 s)
Maximum Operating Temperature — 225 C

数据手册与资源

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