MRF6V14300HSR5 vs MRF6V14300HR5 비교

다음의 상세 나란히 비교: MRF6V14300HSR5 제조: NXP Semiconductors 및 MRF6V14300HR5 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MRF6V14300HSR5 MRF6V14300HSR5 - 330W LDMOS RF Power MOSFET, 1.4GHz, 50V | NXP

MRF6V14300HSR5 - 330W LDMOS RF Power MOSFET, 1.4GHz, 50V | NXP

MRF6V14300HSR5 ✓ 활성
NXP Semiconductors
MRF6V14300HR5 MRF6V14300HR5 - 330W, 1.4GHz RF Power LDMOS MOSFET | NXP

MRF6V14300HR5 - 330W, 1.4GHz RF Power LDMOS MOSFET | NXP

MRF6V14300HR5 ✓ 활성

사양 비교

파라미터 MRF6V14300HSR5 MRF6V14300HR5
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $162.00 $184.20
트랜지스터 유형 LDMOS, N-Channel, RF Power N-Channel Lateral RF Power MOSFET (LDMOS-family)
Technology Lateral N-Channel MOSFET (LDMOS) —
Family VHV6 (Very High Voltage, 6th generation) —
Drain-Source Voltage (Vds) Rated 100 V —
Operating Drain Voltage (Test) 50 V —
Operating Frequency Range 1200 MHz to 1400 MHz —
Typical Test Frequency 1.4 GHz —
Peak Output Power 330 W (pulsed) —
Typical Power Gain 18 dB at 1.4 GHz —
Quiescent Current (Idq) 150 mA —
Duty Cycle 1% to 12% (pulsed) 1% to 12%
패키지 NI-780S (SOT1793), 3-pin ceramic —
실장 유형 Surface Mount / Flange Mount Chassis / screw-mount (NI-780H ceramic flange)
Lead Free Status Lead Free (per NXP product page) —
RoHS 상태 Compliant [DATA_NEEDED: RoHS status]
Manufacturer — NXP Semiconductors (formerly Freescale)
패키지 / 케이스 — NI-780H-2L (push-pull ceramic flange)
Drain-Source Voltage (Vdss) — 50 V
Drain Current (Id) — 150 mA (typical pulsed bias)
Operating Frequency — 1.4 GHz (characterized 1200-1400 MHz)
Output Power (Pout) — 330 W pulsed
Power Gain (Gps) — 18 dB typical
Configuration — Single, push-pull
Channel Type — N-Channel enhancement mode
Number of Elements — 1
Peak Reflow Temperature — 260 C (max 40 s)
Maximum Operating Temperature — 225 C

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청