MRF7S19080HR3 vs MRF7S19120NR1 对比
详细并排对比 MRF7S19080HR3 出自 NXP Semiconductors 和 MRF7S19120NR1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
NXP Semiconductors
MRF7S19080HR3 - 24W 1.99GHz RF Power LDMOS | NXP | Base Station
MRF7S19080HR3 ✓ 量产中
规格对比
| 参数 | MRF7S19080HR3 | MRF7S19120NR1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $36.20 | $73.00 |
| 晶体管类型 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral |
| Technology | HV7 RF Power LDMOS | RF Power MOSFET (Gen7 HV8 LDMOS) |
| Frequency Range | 1930 MHz to 1990 MHz | 1930 MHz to 1990 MHz |
| Test Frequency | 1.99 GHz (1987.5 MHz) | — |
| Drain-Source Voltage (Vdss) Rated | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V | — |
| Quiescent Current (IDQ) | 750 mA | — |
| Output Power (Pout, Avg.) | 24 W (W-CDMA) | — |
| Power Gain (Gp) | 18 dB | — |
| Drain Efficiency | 32 % at 24 W Avg. | — |
| ACPR @ 5 MHz Offset | -38 dBc in 3.84 MHz channel | — |
| Device Output Signal PAR | 6.2 dB @ 0.01 % CCDF | — |
| 封装 | NI-780H-2L (ceramic, flanged) | TO-270 WB-4 (overmolded plastic, 4-lead) |
| 安装类型 | Surface Mount / Screw Mount | — |
| Lead Free Status | Lead Free | Lead Free per datasheet |
| RoHS 状态 | Compliant | — |
| Configuration | Single, Push-Pull | — |
| Output Power (Avg, W-CDMA) | — | 36 W |
| Drain-Source Voltage (Vds max) | — | 65 V (rated) |
| Test Supply Voltage (Vdd) | — | 28 V |
| Test Quiescent Current (Idq) | — | 1.2 A |
| Power Gain (typ) | — | 18 dB at 1.99 GHz |
| Operating Class | — | Class AB, Class C |
| 安装方式 | — | Surface Mount / Flange Mount |
| 引脚数 | — | 5 (per Freescale/NXP datasheet) |
| Target Modulation | — | W-CDMA, CDMA, multi-carrier GSM |
| Application | — | CDMA / W-CDMA base station final-stage PA |