MRF7S19080HR3 vs MRF7S19120NR1 비교
다음의 상세 나란히 비교: MRF7S19080HR3 제조: NXP Semiconductors 및 MRF7S19120NR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MRF7S19080HR3 - 24W 1.99GHz RF Power LDMOS | NXP | Base Station
MRF7S19080HR3 ✓ 활성
사양 비교
| 파라미터 | MRF7S19080HR3 | MRF7S19120NR1 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $36.20 | $73.00 |
| 트랜지스터 유형 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral |
| Technology | HV7 RF Power LDMOS | RF Power MOSFET (Gen7 HV8 LDMOS) |
| Frequency Range | 1930 MHz to 1990 MHz | 1930 MHz to 1990 MHz |
| Test Frequency | 1.99 GHz (1987.5 MHz) | — |
| Drain-Source Voltage (Vdss) Rated | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V | — |
| Quiescent Current (IDQ) | 750 mA | — |
| Output Power (Pout, Avg.) | 24 W (W-CDMA) | — |
| Power Gain (Gp) | 18 dB | — |
| Drain Efficiency | 32 % at 24 W Avg. | — |
| ACPR @ 5 MHz Offset | -38 dBc in 3.84 MHz channel | — |
| Device Output Signal PAR | 6.2 dB @ 0.01 % CCDF | — |
| 패키지 | NI-780H-2L (ceramic, flanged) | TO-270 WB-4 (overmolded plastic, 4-lead) |
| 실장 유형 | Surface Mount / Screw Mount | — |
| Lead Free Status | Lead Free | Lead Free per datasheet |
| RoHS 상태 | Compliant | — |
| Configuration | Single, Push-Pull | — |
| Output Power (Avg, W-CDMA) | — | 36 W |
| Drain-Source Voltage (Vds max) | — | 65 V (rated) |
| Test Supply Voltage (Vdd) | — | 28 V |
| Test Quiescent Current (Idq) | — | 1.2 A |
| Power Gain (typ) | — | 18 dB at 1.99 GHz |
| Operating Class | — | Class AB, Class C |
| 장착 스타일 | — | Surface Mount / Flange Mount |
| 핀 수 | — | 5 (per Freescale/NXP datasheet) |
| Target Modulation | — | W-CDMA, CDMA, multi-carrier GSM |
| Application | — | CDMA / W-CDMA base station final-stage PA |