MRF8HP21130HR5 vs MRF8HP21080HR5 对比
详细并排对比 MRF8HP21130HR5 出自 NXP Semiconductors 和 MRF8HP21080HR5 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
NXP Semiconductors
MRF8HP21130HR5 - 130W LDMOS RF Power Transistor | NXP | LTE/W-CDMA
MRF8HP21130HR5 Obsolete
规格对比
| 参数 | MRF8HP21130HR5 | MRF8HP21080HR5 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | Obsolete | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $65.00 | $88.00 |
| 晶体管类型 | LDMOS, N-Channel, Dual | LDMOS, N-Channel, Dual (2 elements) |
| Technology | HV8 Lateral MOSFET | W-CDMA, LTE Lateral N-Channel RF Power MOSFET |
| Drain-to-Source Voltage (Vdss) Rated | 65 V | — |
| Test Conditions Voltage | 28 V | — |
| Test Conditions Current (Idq) | 360 mA | — |
| Operating Frequency Range | 2110 MHz to 2170 MHz | — |
| Center Test Frequency | 2.17 GHz | — |
| Power Gain | 14 dB | 14.4 dB at 2.17 GHz |
| Output Power (CW, Test) | 28 W | — |
| Maximum Power Dissipation | 118 W | — |
| Configuration | Common Source, 2 Elements | Common Source, 2 Elements |
| 封装 / 外壳 | NI-780-4 (ceramic flange) | NI-780-4 (Case 465M) |
| Supplier Device Package | NI-780-4 | — |
| 安装类型 | Surface Mount / Chassis Mount (flange) | Flange Mount / Chassis Mount |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Frequency | — | 2.17 GHz (2110–2170 MHz cellular band) |
| Test Voltage | — | 28 V |
| Test Current | — | 150 mA |
| Output Power (Avg.) | — | 16 W (W-CDMA/LTE) |
| Drain-Source Voltage Rating | — | 65 V |
| Number of Terminals | — | 4 |
| Surface Mount | — | No (flange mount) |
| Peak Reflow Temperature | — | 260 C (not applicable - flange mount) |
| Part Status (DigiKey) | — | Discontinued at Digi-Key |