MRF8S18120HR3 vs MRF8S18120HSR3 对比
详细并排对比 MRF8S18120HR3 出自 NXP Semiconductors 和 MRF8S18120HSR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
NXP Semiconductors
MRF8S18120HR3 - 1.8GHz 72W CW LDMOS RF Power Transistor | NXP
MRF8S18120HR3 ✓ 量产中
规格对比
| 参数 | MRF8S18120HR3 | MRF8S18120HSR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $54.20 | $65.00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Part Number | MRF8S18120HR3 | MRF8S18120HSR3 |
| 晶体管类型 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | 1805 to 1880 MHz | — |
| Output Power (CW) | 72 W | 72 W |
| Power Gain (typ) | 18.2 dB at 1.81 GHz | — |
| Drain-Source Voltage (Rated) | 65 V | — |
| Test Drain Voltage (Vdd) | 28 V | — |
| Test Quiescent Current (Idq) | 800 mA | — |
| Drain Current Rating | 10 uA (leakage spec entry per datasheet) | — |
| Operating Mode | Class AB, Class C | — |
| 封装 | NI-780H (3-pin ceramic, flangeless) | — |
| 安装类型 | Surface Mount / Screw-down heatsink | — |
| Target Application | GSM, GSM EDGE base station PA | — |
| RoHS 状态 | Compliant per NXP product page | Compliant |
| Drain-Source Voltage (Max) | — | 65 V |
| Test Drain Voltage | — | 28 V |
| Test Quiescent Current (IDQ) | — | 800 mA |
| Operating Frequency | — | 1805 MHz to 1880 MHz |
| Center Frequency | — | 1.81 GHz |
| Power Gain (Typ) | — | 18.2 dB |
| Drain Current (Test) | — | 800 mA |
| Package Type | — | NI-780S |
| 安装方式 | — | Surface Mount (ceramic flange) |
| Operating Class | — | Class AB / Class C |
| Application | — | GSM / GSM EDGE cellular base station power amplifiers |