MT25QU01GBBB8E12-0AUT vs MT29F4G01ABBFD12-AUT:F 对比

详细并排对比 MT25QU01GBBB8E12-0AUT 出自 Micron Technology 和 MT29F4G01ABBFD12-AUT:F 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT25QU01GBBB8E12-0AUT MT25QU01GBBB8E12-0AUT - 1Gb SPI NOR Flash 133MHz | Micron

MT25QU01GBBB8E12-0AUT - 1Gb SPI NOR Flash 133MHz | Micron

MT25QU01GBBB8E12-0AUT ✓ 量产中
Micron Technology
MT29F4G01ABBFD12-AUT:F MT29F4G01ABBFD12-AUT:F - 4Gbit SLC SPI NAND Flash | Micron

MT29F4G01ABBFD12-AUT:F - 4Gbit SLC SPI NAND Flash | Micron

MT29F4G01ABBFD12-AUT:F ✓ 量产中

规格对比

参数 MT25QU01GBBB8E12-0AUT MT29F4G01ABBFD12-AUT:F
品牌 Micron Technology Micron Technology
分类 Memory ICs EEPROM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $7.10 $1.58
存储器类型 NOR Flash, Serial (SPI) FLASH - NAND (SLC) Memory IC
Density 1 Gbit (128 MB) —
存储组织 x1 / x2 / x4 (I/O width) —
电源电压 1.8 V [DATA_NEEDED: VCC range]
接口 SPI, Dual SPI, Quad SPI SPI
Max Clock Frequency 133 MHz [DATA_NEEDED: SPI clock frequency]
Access Time 6 ns —
工作温度 -40C to +125C [DATA_NEEDED: temperature range]
封装 24-T-PBGA (6x8 mm) TBGA (63-ball, per Micron serial NAND family)
FBGA Code RW320 —
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified AUT grade, :F automotive suffix
Write Protection Hardware write protection; Software write protection; Write enable latch —
Product Longevity Program No —
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant (lead-free :F suffix)
MSL 等级 [DATA_NEEDED: MSL level] [DATA_NEEDED: moisture sensitivity level]
Program/Erase Endurance [DATA_NEEDED: endurance cycles] —
Data Retention [DATA_NEEDED: retention years] —
存储容量 — 4 Gbit (512 MB)
Cell Type — SLC (Single-Level Cell)
Page Size — [DATA_NEEDED: page size]
Block Size — [DATA_NEEDED: block size]
On-Die ECC — Yes (ECD feature of serial NAND family)
Endurance — [DATA_NEEDED: program/erase cycles]

数据手册与资源

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