MT29F4G01ABBFD12-AUT:F vs MT29F4G01ABBFD12-IT 对比

详细并排对比 MT29F4G01ABBFD12-AUT:F 出自 Micron Technology 和 MT29F4G01ABBFD12-IT 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT29F4G01ABBFD12-AUT:F MT29F4G01ABBFD12-AUT:F - 4Gbit SLC SPI NAND Flash | Micron

MT29F4G01ABBFD12-AUT:F - 4Gbit SLC SPI NAND Flash | Micron

MT29F4G01ABBFD12-AUT:F ✓ 量产中
Micron Technology
MT29F4G01ABBFD12-IT MT29F4G01ABBFD12-IT - 4Gb 1.8V SPI NAND SLC Flash | Micron

MT29F4G01ABBFD12-IT - 4Gb 1.8V SPI NAND SLC Flash | Micron

MT29F4G01ABBFD12-IT ✓ 量产中

规格对比

参数 MT29F4G01ABBFD12-AUT:F MT29F4G01ABBFD12-IT
品牌 Micron Technology Micron Technology
分类 EEPROM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.58 $2.65
存储器类型 FLASH - NAND (SLC) Memory IC FLASH - NAND (SLC), Non-Volatile
接口 SPI SPI (x1, x2, x4 quad-I/O)
存储容量 4 Gbit (512 MB) —
Cell Type SLC (Single-Level Cell) —
封装 TBGA (63-ball, per Micron serial NAND family) 24-ball T-PBGA (6x8 mm)
安装类型 Surface Mount Surface Mount (BGA)
Automotive Qualification AUT grade, :F automotive suffix —
电源电压 [DATA_NEEDED: VCC range] —
Max Clock Frequency [DATA_NEEDED: SPI clock frequency] —
Page Size [DATA_NEEDED: page size] 4352 bytes (4096 data + 256 spare)
Block Size [DATA_NEEDED: block size] 256 KiB (typical, 64 pages per block)
On-Die ECC Yes (ECD feature of serial NAND family) —
Endurance [DATA_NEEDED: program/erase cycles] —
工作温度 [DATA_NEEDED: temperature range] -40 C to +85 C (Industrial)
RoHS 状态 Compliant (lead-free :F suffix) Compliant
MSL 等级 [DATA_NEEDED: moisture sensitivity level] 3 (per JEDEC J-STD-020, [DATA_NEEDED: exact floor life])
Density — 4 Gbit (4G x 1)
Memory Organization — 4096 + 256 bytes per page (4352 bytes total)
Maximum SPI Clock — 83 MHz
Supply Voltage (VCC) — 1.7 V to 1.95 V (1.8 V typical)
Cell Technology — Single-Level Cell (SLC)
On-die ECC — Supported (host-assisted external ECC typical)

数据手册与资源

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